Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires.
about
Self-Assembled Epitaxial Core-Shell Nanocrystals with Tunable Magnetic Anisotropy.Controlled synthesis of Ni/CuOx/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching.Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.Simple, Inexpensive, and Rapid Approach to Fabricate Cross-Shaped Memristors Using an Inorganic-Nanowire-Digital-Alignment Technique and a One-Step Reduction Process.Preparing non-volatile resistive switching memories by tuning the content of Au@air@TiO2-h yolk-shell microspheres in a poly(3-hexylthiophene) layer.Observation of Resistive Switching Behavior in Crossbar Core-Shell Ni/NiO Nanowires Memristor.Physically Transient Resistive Switching Memory Based on Silk Protein.Photoconductive probing of the trap distribution in switchable interfaces.Improvement of resistive switching in NiO-based nanowires by inserting Pt layers
P2860
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P2860
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires.
description
2011 nî lūn-bûn
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2011年の論文
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2011年学术文章
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2011年学术文章
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2011年學術文章
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name
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires.
@en
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires.
@nl
type
label
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires.
@en
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires.
@nl
prefLabel
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires.
@en
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires.
@nl
P2093
P2860
P356
P1433
P1476
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires
@en
P2093
Bruce Harteneck
Carlo Cagli
Federico Nardi
Zhongkui Tan
P2860
P304
P356
10.1002/SMLL.201101157
P577
2011-08-23T00:00:00Z