'Memristive' switches enable 'stateful' logic operations via material implication. - Wikidata - wikimedia - TriplyDB

'Memristive' switches enable 'stateful' logic operations via material implication.

'Memristive' switches enable 'stateful' logic operations via material implication.

http://www.wikidata.org/entity/Q34618562

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Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices Nanobatteries in redox-based resistive switches require extension of memristor theory A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures Hierarchical Chunking of Sequential Memory on Neuromorphic Architecture with Reduced Synaptic Plasticity.Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems.Probing nanoscale oxygen ion motion in memristive systems Memristors in the electrical network of Aloe vera L.Memristors in plants Thermoelectric Seebeck effect in oxide-based resistive switching memory Spatially-resolved mapping of history-dependent coupled electrochemical and electronical behaviors of electroresistive NiO.Novel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density.Projected phase-change memory devices.Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories.Multi-input regulation and logic with T7 promoters in cells and cell-free systems.Tunnel conductivity switching in a single nanoparticle-based nano floating gate memory.Functionalized graphitic carbon nitride for metal-free, flexible and rewritable nonvolatile memory device via direct laser-writing Conductive-bridging random access memory: challenges and opportunity for 3D architecture.Information processing in parallel through directionally resolved molecular polarization components in coherent multidimensional spectroscopy.Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaO(x) Thin Film.A learnable parallel processing architecture towards unity of memory and computing.All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics Atomic View of Filament Growth in Electrochemical Memristive Elements Probing the electrical switching of a memristive optical antenna by STEM EELS.Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch An analytical model of memristors in plants Topological computation based on direct magnetic logic communication.Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM.Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes.Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device Electronic Conduction in Ti/Poly-TiO2/Ti Structures.Excitatory Post-Synaptic Potential Mimicked in Indium-Zinc-Oxide Synaptic Transistors Gated by Methyl Cellulose Solid Electrolyte.Deformable devices with integrated functional nanomaterials for wearable electronics Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.Nanoscale resistive switching devices: mechanisms and modeling.Porous inorganic nanostructures with colloidal dimensions: synthesis and applications in electrochemical energy devices.Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure.Realisation of all 16 Boolean logic functions in a single magnetoresistance memory cell.

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P2860

'Memristive' switches enable 'stateful' logic operations via material implication.

http://www.wikidata.org/entity/Q34618562

description

2010 nî lūn-bûn

@nan

2010 թուականի Ապրիլին հրատարակուած գիտական յօդուած

@hyw

2010 թվականի ապրիլին հրատարակված գիտական հոդված

@hy

2010年の論文

@ja

2010年論文

@yue

2010年論文

@zh-hant

2010年論文

@zh-hk

2010年論文

@zh-mo

2010年論文

@zh-tw

2010年论文

@wuu

name

'Memristive' switches enable 'stateful' logic operations via material implication.

@ast

'Memristive' switches enable 'stateful' logic operations via material implication.

@en

'Memristive' switches enable 'stateful' logic operations via material implication.

@nl

type

label

'Memristive' switches enable 'stateful' logic operations via material implication.

@ast

'Memristive' switches enable 'stateful' logic operations via material implication.

@en

'Memristive' switches enable 'stateful' logic operations via material implication.

@nl

prefLabel

'Memristive' switches enable 'stateful' logic operations via material implication.

@ast

'Memristive' switches enable 'stateful' logic operations via material implication.

@en

'Memristive' switches enable 'stateful' logic operations via material implication.

@nl

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'Memristive' switches enable 'stateful' logic operations via material implication.

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Duncan R Stewart

http://www.w3.org/2001/XMLSchema#string

Gregory S Snider

http://www.w3.org/2001/XMLSchema#string

J Joshua Yang

http://www.w3.org/2001/XMLSchema#string

Julien Borghetti

http://www.w3.org/2001/XMLSchema#string

Philip J Kuekes

http://www.w3.org/2001/XMLSchema#string

P2888

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873-876

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scholarly article

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10.1038/NATURE08940

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7290

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464

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R. Stanley Williams

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2010-04-01T00:00:00Z

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1039201135

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20376145

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