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Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor DepositionComposition and bandgap-graded semiconductor alloy nanowires.A brief overview of some physical studies on the relaxation dynamics and Förster resonance energy transfer of semiconductor quantum dots.Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates.The structure-dependent quantum yield of ZnCdS nanocrystalsBrillouin zone unfolding method for effective phonon spectraCalculation of phonon spectrum and thermal properties in suspended 〈100〉 In X Ga1−X As nanowires
P2860
Q28834523-F6CA51CA-2AD9-4BEF-8878-43656B1639C9Q34079889-2B9AA9FF-2364-4781-892A-6A0112AAC646Q39395843-B56A93C2-0A5F-4003-B92C-A5274D03D9EEQ45948906-3F5B8462-98E4-40FD-AE6A-EE5E71BBE192Q57351880-24CC68BE-34FB-414A-A5F6-6B35010C96FAQ57368065-9214EC1E-97A9-4247-AED1-448C0FADFC86Q57368287-A379C22B-EDC8-4398-BC01-BD35C7ED5E38
P2860
description
2006 nî lūn-bûn
@nan
2006年の論文
@ja
2006年学术文章
@wuu
2006年学术文章
@zh
2006年学术文章
@zh-cn
2006年学术文章
@zh-hans
2006年学术文章
@zh-my
2006年学术文章
@zh-sg
2006年學術文章
@yue
2006年學術文章
@zh-hant
name
InAs1-xPx nanowires for device engineering.
@en
InAs1-xPx nanowires for device engineering.
@nl
type
label
InAs1-xPx nanowires for device engineering.
@en
InAs1-xPx nanowires for device engineering.
@nl
prefLabel
InAs1-xPx nanowires for device engineering.
@en
InAs1-xPx nanowires for device engineering.
@nl
P2093
P50
P356
P1433
P1476
InAs1-xPx nanowires for device engineering
@en
P2093
P304
P356
10.1021/NL052181E
P407
P577
2006-03-01T00:00:00Z