Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain.
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Oxygen-induced degradation of the electronic properties of thin-layer InSe.Tuning quantum electron and phonon transport in two-dimensional materials by strain engineering: a Green's function based study.The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices.Pulsed laser deposition assisted grown continuous monolayer MoSe2
P2860
Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain.
description
2016 nî lūn-bûn
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2016年の論文
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2016年学术文章
@wuu
2016年学术文章
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2016年学术文章
@zh-cn
2016年学术文章
@zh-hans
2016年学术文章
@zh-my
2016年学术文章
@zh-sg
2016年學術文章
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2016年學術文章
@zh-hant
name
Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain.
@en
Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain.
@nl
type
label
Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain.
@en
Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain.
@nl
prefLabel
Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain.
@en
Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain.
@nl
P2093
P2860
P50
P356
P1433
P1476
Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain.
@en
P2093
Agnieszka Kuc
Erik H Diependaal
Herre S J van der Zant
P2860
P304
P356
10.1039/C5NR08219F
P407
P577
2016-01-20T00:00:00Z
P698
P818
1511.09241