Self-screened high performance multi-layer MoS₂ transistor formed by using a bottom graphene electrode.
about
Study of graphene plasmons in graphene-MoS2 heterostructures for optoelectronic integrated devices.Gate Tunable Transport in Graphene/MoS₂/(Cr/Au) Vertical Field-Effect Transistors.Carrier-Type Modulation and Mobility Improvement of Thin MoTe2.Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures.A Novel and Facile Route to Synthesize Atomic-Layered MoS2 Film for Large-Area Electronics.Electron dynamics in MoS2-graphite heterostructures.Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures.
P2860
Q40425067-EF181148-BBE1-423A-A1AF-C95E1C088895Q47214460-E2C5C8A8-6D68-4D1C-8935-6F5ED5142F2AQ47748771-2BA4222E-955E-4CB7-A649-2F7A25FE1747Q48043051-FF238B12-D49B-41E2-88D6-9F0160854CADQ48055416-7582B6CC-BDF6-42A7-B90F-018E8677AFC2Q49994635-805E1DCB-9443-4869-BE43-0C259D9B7414Q51373248-CC92348B-8BB2-4776-843B-1CB167F72576
P2860
Self-screened high performance multi-layer MoS₂ transistor formed by using a bottom graphene electrode.
description
2015 nî lūn-bûn
@nan
2015年の論文
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2015年学术文章
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2015年学术文章
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2015年学术文章
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2015年学术文章
@zh-hans
2015年学术文章
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2015年學術文章
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name
Self-screened high performance ...... g a bottom graphene electrode.
@en
Self-screened high performance ...... g a bottom graphene electrode.
@nl
type
label
Self-screened high performance ...... g a bottom graphene electrode.
@en
Self-screened high performance ...... g a bottom graphene electrode.
@nl
prefLabel
Self-screened high performance ...... g a bottom graphene electrode.
@en
Self-screened high performance ...... g a bottom graphene electrode.
@nl
P2093
P2860
P356
P1433
P1476
Self-screened high performance ...... g a bottom graphene electrode.
@en
P2093
Daeyeong Lee
Faisal Ahmed
Won Jong Yoo
Xiaochi Liu
P2860
P304
19273-19281
P356
10.1039/C5NR06076A
P407
P577
2015-11-04T00:00:00Z