Single-Layer ReS₂: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy.
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Selectively tunable optical Stark effect of anisotropic excitons in atomically thin ReS2.Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayersThe In-Plane Anisotropy of WTe2 Investigated by Angle-Dependent and Polarized Raman Spectroscopy.Disorder engineering and conductivity dome in ReS2 with electrolyte gating.Periodic potentials in hybrid van der Waals heterostructures formed by supramolecular lattices on graphene.Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.Highly Anisotropic Sb2 Se3 Nanosheets: Gentle Exfoliation from the Bulk Precursors Possessing 1D Crystal Structure.Influence of transition metal doping on the electronic and optical properties of ReS2 and ReSe2 monolayers.Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.Synthesis of Large-Size 1T' ReS2x Se2(1-x) Alloy Monolayer with Tunable Bandgap and Carrier Type.Preferential S/Se occupation in an anisotropic ReS2(1-x)Se2x monolayer alloy.A study on the electronic and interfacial structures of monolayer ReS2-metal contacts.Environmental stability of 2D anisotropic tellurium containing nanomaterials: anisotropic to isotropic transition.3D Anisotropic Thermal Conductivity of Exfoliated Rhenium Disulfide.Controlling Structural Anisotropy of Anisotropic 2D Layers in Pseudo-1D/2D Material Heterojunctions.Atomic Layer Deposition of Rhenium Disulfide.Angle resolved vibrational properties of anisotropic transition metal trichalcogenide nanosheets.Anisotropic transport in 1T' monolayer MoS2 and its metal interfaces.Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1-x) Se2x Alloys with Distorted 1T Structure.Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy.Controlled growth of large-area anisotropic ReS2 atomic layer and its photodetector application.Strong dichroic emission in the pseudo one dimensional material ZrS3.Application of chemical vapor–deposited monolayer ReSe2 in the electrocatalytic hydrogen evolution reactionRhenium dichalcogenides (ReX2, X = S or Se): an emerging class of TMDs familySynthesis of layered platelets by self-assembly of rhenium-based clusters directed by long-chain amines
P2860
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P2860
Single-Layer ReS₂: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年学术文章
@wuu
2015年学术文章
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2015年学术文章
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2015年学术文章
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2015年学术文章
@zh-my
2015年学术文章
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2015年學術文章
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name
Single-Layer ReS₂: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy.
@en
Single-Layer ReS₂: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy.
@nl
type
label
Single-Layer ReS₂: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy.
@en
Single-Layer ReS₂: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy.
@nl
prefLabel
Single-Layer ReS₂: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy.
@en
Single-Layer ReS₂: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy.
@nl
P2093
P50
P356
P1433
P1476
Single-Layer ReS₂: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy
@en
P2093
Chao-Hui Yeh
Hannu-Pekka Komsa
Ying-Sheng Huang
Zheng-Yong Liang
P304
11249-11257
P356
10.1021/ACSNANO.5B04851
P407
P577
2015-09-28T00:00:00Z