The mechanism of electroforming of metal oxide memristive switches.
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Engineering nonlinearity into memristors for passive crossbar applicationsPermanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching.Probing nanoscale oxygen ion motion in memristive systemsVoltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions.Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) techniqueNovel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density.Key concepts behind forming-free resistive switching incorporated with rectifying transport properties.In situ imaging of the conducting filament in a silicon oxide resistive switch.Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaO(x) Thin Film.Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAMProbing the electrical switching of a memristive optical antenna by STEM EELS.Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiOx/TiN.Investigation and Manipulation of Different Analog Behaviors of Memristor as Electronic Synapse for Neuromorphic ApplicationsNanometer-scale mapping of irreversible electrochemical nucleation processes on solid Li-ion electrolytes.Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor.Electronic Conduction in Ti/Poly-TiO2/Ti Structures.Characterization of electroforming-free titanium dioxide memristors.Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching.Resistive switching memory: observations with scanning probe microscopy.Nanoscale resistive switching devices: mechanisms and modeling.Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy.Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices.Nanoimprint lithography for nanodevice fabrication.Facile fabrication of complex networks of memristive devices.Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.Forming-less and Non-Volatile Resistive Switching in WOX by Oxygen Vacancy Control at Interfaces.Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition.NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO2 stack during resistive switching.Determination of the electrostatic potential distribution in Pt/Fe:SrTiO₃/Nb:SrTiO₃ thin-film structures by electron holography.Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition.Effect of voltage polarity and amplitude on electroforming of TiO2 based memristive devices.Voltage-controlled domain wall traps in ferromagnetic nanowires.Engineering electrodeposited ZnO films and their memristive switching performance.Synaptic behavior and STDP of asymmetric nanoscale memristors in biohybrid systems.High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires.Stateful characterization of resistive switching TiO2 with electron beam induced currents.Millivolt Modulation of Plasmonic Metasurface Optical Response via Ionic Conductance.Atomically Thin Femtojoule Memristive Device.A SIMS study of cation and anion diffusion in tantalum oxide.Transparent amorphous strontium titanate resistive memories with transient photo-response.
P2860
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P2860
The mechanism of electroforming of metal oxide memristive switches.
description
2009 nî lūn-bûn
@nan
2009年の論文
@ja
2009年学术文章
@wuu
2009年学术文章
@zh
2009年学术文章
@zh-cn
2009年学术文章
@zh-hans
2009年学术文章
@zh-my
2009年学术文章
@zh-sg
2009年學術文章
@yue
2009年學術文章
@zh-hant
name
The mechanism of electroforming of metal oxide memristive switches.
@en
The mechanism of electroforming of metal oxide memristive switches.
@nl
type
label
The mechanism of electroforming of metal oxide memristive switches.
@en
The mechanism of electroforming of metal oxide memristive switches.
@nl
prefLabel
The mechanism of electroforming of metal oxide memristive switches.
@en
The mechanism of electroforming of metal oxide memristive switches.
@nl
P2093
P356
P1433
P1476
The mechanism of electroforming of metal oxide memristive switches.
@en
P2093
Chun Ning Lau
Douglas A A Ohlberg
Duncan R Stewart
J Joshua Yang
Matthew D Pickett
P304
P356
10.1088/0957-4484/20/21/215201
P577
2009-05-05T00:00:00Z