Key concepts behind forming-free resistive switching incorporated with rectifying transport properties.
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Resistance switching mode transformation in SrRuO3/Cr-doped SrZrO3/Pt frameworks via a thermally activated Ti out-diffusion processEngineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes.Selector-free resistive switching memory cell based on BiFeO3 nano-island showing high resistance ratio and nonlinearity factor.Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.
P2860
Key concepts behind forming-free resistive switching incorporated with rectifying transport properties.
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2013 nî lūn-bûn
@nan
2013 թուականի Յունուարին հրատարակուած գիտական յօդուած
@hyw
2013 թվականի հունվարին հրատարակված գիտական հոդված
@hy
2013年の論文
@ja
2013年論文
@yue
2013年論文
@zh-hant
2013年論文
@zh-hk
2013年論文
@zh-mo
2013年論文
@zh-tw
2013年论文
@wuu
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Key concepts behind forming-fr ...... ctifying transport properties.
@ast
Key concepts behind forming-fr ...... ctifying transport properties.
@en
Key concepts behind forming-fr ...... ctifying transport properties.
@nl
type
label
Key concepts behind forming-fr ...... ctifying transport properties.
@ast
Key concepts behind forming-fr ...... ctifying transport properties.
@en
Key concepts behind forming-fr ...... ctifying transport properties.
@nl
prefLabel
Key concepts behind forming-fr ...... ctifying transport properties.
@ast
Key concepts behind forming-fr ...... ctifying transport properties.
@en
Key concepts behind forming-fr ...... ctifying transport properties.
@nl
P2093
P2860
P50
P356
P1433
P1476
Key concepts behind forming-fr ...... ctifying transport properties.
@en
P2093
Arndt Mücklich
Chuangui Wu
Heidemarie Schmidt
Manfred Helm
Wanli Zhang
Yuanfu Chen
P2860
P2888
P356
10.1038/SREP02208
P407
P577
2013-01-01T00:00:00Z
P5875
P6179
1041280509