Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.
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Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam EpitaxyModulation of the electronic and mechanical properties of phagraphene via hydrogenation and fluorination.Nanoscale momentum-resolved vibrational spectroscopy.Recent advances in inelastic electron tunneling spectroscopyMoiré-Modulated Conductance of Hexagonal Boron Nitride Tunnel Barriers
P2860
Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.
description
2016 nî lūn-bûn
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2016年の論文
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2016年学术文章
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2016年学术文章
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2016年学术文章
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name
Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.
@en
Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.
@nl
type
label
Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.
@en
Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.
@nl
altLabel
Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors
@en
prefLabel
Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.
@en
Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.
@nl
P2093
P2860
P50
P1476
Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.
@en
P2093
D Ghazaryan
E E Vdovin
G J Slotman
M I Katsnelson
T M Fromhold
P2860
P304
P356
10.1103/PHYSREVLETT.116.186603
P407
P577
2016-05-05T00:00:00Z
P698
P818
1512.02143