Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors.
about
Dry shear aligning: a simple and versatile method to smooth and align the surfaces of carbon nanotube thin films.Recent Progress in Electronic Skin.DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.Uniform electroactive fibre-like micelle nanowires for organic electronicsAssembly and Electronic Applications of Colloidal Nanomaterials.Self-Assembled Monolayers as Patterning Tool for Organic Electronic Devices.Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs.Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping.Switchable changes in the conductance of single-walled carbon nanotube networks on exposure to water vapour.Superlyophilicity-Facilitated Synthesis Reaction at the Microscale: Ordered Graphdiyne Stripe Arrays.On-Chip Chemical Self-Assembly of Semiconducting Single-Walled Carbon Nanotubes (SWNTs): Toward Robust and Scale Invariant SWNTs Transistors.Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer.Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons.
P2860
Q35899604-9168B39E-5D73-47E4-9133-BAE9E4201E78Q37422960-CFF40788-91E7-4CD5-B8AD-F9367365C0DBQ38566615-0AF2F1AB-F478-47AD-BF57-99062BE5CFB1Q38666741-966B4581-7A4B-43EF-8F42-67FF3EB6955DQ38793700-9D33E034-C314-4AFD-8B17-90C9BC167E67Q39119241-56877701-A39D-43ED-B19B-582A2FB0CE83Q41009109-68A0BCAA-7CFD-4E3B-97ED-8D90F4A8FBFDQ44873302-86782C6F-FD65-447D-9EE0-00FEBB0DA8D6Q47951327-B3792A6D-6F1E-42F6-8607-1DAEF58270B8Q48986637-49A8BBA9-6D3B-47AB-A4FB-D092BF072FD4Q51441339-32420A05-3420-4EA7-849D-3925E36144A6Q51534770-0084A6CE-0CAA-4071-9F1C-449033BB1444Q54941188-430397B6-4D31-45AB-B589-42C449DC1A27
P2860
Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年学术文章
@wuu
2015年学术文章
@zh
2015年学术文章
@zh-cn
2015年学术文章
@zh-hans
2015年学术文章
@zh-my
2015年学术文章
@zh-sg
2015年學術文章
@yue
2015年學術文章
@zh-hant
name
Large-area assembly of densely ...... n to field-effect transistors.
@en
Large-area assembly of densely ...... n to field-effect transistors.
@nl
type
label
Large-area assembly of densely ...... n to field-effect transistors.
@en
Large-area assembly of densely ...... n to field-effect transistors.
@nl
prefLabel
Large-area assembly of densely ...... n to field-effect transistors.
@en
Large-area assembly of densely ...... n to field-effect transistors.
@nl
P2093
P2860
P356
P1433
P1476
Large-area assembly of densely ...... n to field-effect transistors.
@en
P2093
Gaurav Giri
Gregory Pitner
H-S Philip Wong
Huiliang Wang
Ja Hoon Koo
Joonsuk Park
Robert Sinclair
Steve Park
P2860
P304
P356
10.1002/ADMA.201405289
P407
P577
2015-03-18T00:00:00Z