Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain
about
Color-selective photodetection from intermediate colloidal quantum dots buried in amorphous-oxide semiconductors.Photogating in Low Dimensional Photodetectors.Wide-spectral/dynamic-range skin-compatible phototransistors enabled by floated heterojunction structures with surface functionalized SWCNTs and amorphous oxide semiconductors.All-inorganic perovskite quantum dot/mesoporous TiO2 composite-based photodetectors with enhanced performance.
P2860
Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain
description
wetenschappelijk artikel
@nl
наукова стаття, опублікована в січні 2016
@uk
name
Ultrasensitive PbS quantum-dot ...... nd imaging with high photogain
@en
Ultrasensitive PbS quantum-dot ...... nd imaging with high photogain
@nl
type
label
Ultrasensitive PbS quantum-dot ...... nd imaging with high photogain
@en
Ultrasensitive PbS quantum-dot ...... nd imaging with high photogain
@nl
prefLabel
Ultrasensitive PbS quantum-dot ...... nd imaging with high photogain
@en
Ultrasensitive PbS quantum-dot ...... nd imaging with high photogain
@nl
P2093
P2860
P356
P1433
P1476
Ultrasensitive PbS quantum-dot ...... nd imaging with high photogain
@en
P2093
Byeong-Kwon Ju
Do Kyung Hwang
Dong Ick Son
Hee Sung Lee
Hong Hee Kim
Ji-hoon Kyhm
Jin Dong Song
Junyeong Lee
Min-Chul Park
Seongil Im
P2860
P2888
P304
P356
10.1038/AM.2015.137
P577
2016-01-01T00:00:00Z