Effect of anharmonicity of the strain energy on band offsets in semiconductor nanostructures
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Understanding the electric field control of the electronic and optical properties of strongly-coupled multi-layered quantum dot molecules.Numerical guidelines for setting up a k.p simulator with applications to quantum dot heterostructures and topological insulatorsExperimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacksExperimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowiresMultiscale Modeling of a Quantum Dot HeterostructureShape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowiresSize effects and strain state ofGa1−xInxAs/GaAsmultiple quantum wells: Monte Carlo study
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P2860
Effect of anharmonicity of the strain energy on band offsets in semiconductor nanostructures
description
im November 2004 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
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наукова стаття, опублікована в листопаді 2004
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name
Effect of anharmonicity of the ...... n semiconductor nanostructures
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Effect of anharmonicity of the ...... n semiconductor nanostructures
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type
label
Effect of anharmonicity of the ...... n semiconductor nanostructures
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Effect of anharmonicity of the ...... n semiconductor nanostructures
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prefLabel
Effect of anharmonicity of the ...... n semiconductor nanostructures
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Effect of anharmonicity of the ...... n semiconductor nanostructures
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P2093
P356
P1476
Effect of anharmonicity of the ...... n semiconductor nanostructures
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P2093
Fabiano Oyafuso
Olga L. Lazarenkova
Seungwon Lee
P304
P356
10.1063/1.1814810
P407
P577
2004-11-01T00:00:00Z
P818
cond-mat/0405627