Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dotsConductance spectroscopy in coupled quantum dotsRoom temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodesLaser-bandwidth-induced fluctuations in the intensity transmitted by a Fabry-Pérot interferometer.A single-atom transistor.Ohm's law survives to the atomic scale.Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy.Probing scattering mechanisms with symmetric quantum cascade lasers.Atomistic modeling of metallic nanowires in silicon.Electrically controlling single-spin qubits in a continuous microwave fieldQuantum simulation of the Hubbard model with dopant atoms in silicon.Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors.Characterizing Si:P quantum dot qubits with spin resonance techniquesThe evaluation of non-topological components in Berry phase and momentum relaxation time in a gapped 3D topological insulator.Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory.Saving Moore's Law Down To 1 nm Channels With Anisotropic Effective Mass.Silicon quantum processor with robust long-distance qubit couplings.Corrigendum: Characterizing Si:P quantum dot qubits with spin resonance techniques.Observation of 1D behavior in Si nanowires: toward high-performance TFETs.Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors.Design space for low sensitivity to size variations in [110] PMOS nanowire devices: the implications of anisotropy in the quantization mass.Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors.High precision quantum control of single donor spins in silicon.Learning and research in the cloud.Performance analysis of a Ge/Si core/shell nanowire field-effect transistor.Lifetime-enhanced transport in silicon due to spin and valley blockade.Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires.Coherent control of a single ²⁹Si nuclear spin qubit.Spin-lattice relaxation times of single donors and donor clusters in silicon.Spin blockade and exchange in Coulomb-confined silicon double quantum dots.Spatially resolving valley quantum interference of a donor in silicon.Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting.Noninvasive spatial metrology of single-atom devices.Electrically Tunable Bandgaps in Bilayer MoS₂.Rate equations for the phonon peak in resonant-tunneling structures.Rate equations from the Keldysh formalism applied to the phonon peak in resonant-tunneling diodes.A tight-binding study of single-atom transistors.Stark tuning of the charge states of a two-donor molecule in silicon.Mapping donor electron wave function deformations at a sub-Bohr orbit resolution.Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot.
P50
Q21708436-EA04D684-93BE-46A9-8DB1-0D4A07B602A7Q21708523-6420BDCB-C8C0-44A6-91D4-124A4A913474Q29541780-233804E7-36EF-4FBF-B347-6F4CA1169D21Q31926795-FFA8C3DC-D673-4A4F-B89C-A46BCADCC490Q34161441-A401FD82-FD32-4573-8136-B91AA7D06A67Q34245138-73653B4A-A07F-4B3C-9787-391DE69DF70EQ34434028-B2722AF8-9F6E-418E-BBAE-ED77C92055C0Q34643831-375EAFFD-E0F6-4D5E-A559-CB5CB2E825DDQ34879715-F70DB079-38E9-4B0F-8788-DC6D0C09137CQ36268187-6F39B5D7-26C9-4E04-B45F-D3A6D94307FAQ36830309-5FA6A880-5E61-438F-90A4-3E899EBCCECEQ37040120-6CB04E3F-3063-4888-8E09-E1FDEED512C4Q37195807-ED8CE99A-F80F-4D4A-9490-C4A8F07DF4DBQ40661760-FD56FF9B-E04A-4811-BC59-5C84012DD10CQ41201020-3B3697DD-4654-483B-A794-B7909A9FAFBEQ41560669-2F9EC978-8EDD-44A3-A449-BF02D5C9F49CQ41635554-DA2C6146-34C1-4737-BA95-C325342EDAB4Q42122325-FC289778-A727-4318-9E1D-CD2F4E155C9BQ43412081-A303DBD1-B2FD-4EBF-8606-6D6B1CD85FE5Q44731179-8D155FEC-1773-46CA-8E75-D72D23C32751Q47200102-CF7F4A51-4EE0-4F35-B418-73FE8FC72FB5Q47728606-32B643AC-6E19-4CD5-87D6-C40D88D8F9AFQ50675126-1B10E02D-E295-4E01-9CB7-1EF5DE6A559EQ50711047-D8ED591E-D89D-4485-9D16-EF48C7E92685Q51059682-0EF01941-8CBA-4342-BA2F-7BECCE578F3CQ51511054-C5ABF8CB-950C-4F35-BD88-7F8F661753FDQ51582668-574FB3F2-1D66-42C4-B39F-5504974E2FD0Q51582671-C2670FDA-AB28-406E-B9FC-46C7EF3F7F59Q51582678-A1FE8C74-EA54-4A25-9D6E-8DDACFAF2D45Q51590239-7C553131-39C6-403D-8AC7-6DD02CA012F8Q51590457-2E14155D-DEB7-4613-8F11-9605F36D3BBCQ51596040-AA057D51-EE68-4903-90EE-8DDAAE8E9973Q51597231-1752CD98-08E2-45C0-8719-0F557F498277Q51648515-93802DC0-C0C7-45BA-88EB-C9354D095749Q52387894-721CBC3A-E717-4A01-A273-7AC1EB4373F6Q52399180-BD99E817-0DEA-4CA2-BC0C-619B7CA6D9ADQ53421842-8E74E9C4-A67B-4328-8035-5A397B8948E1Q53431477-9495798E-5150-4173-BFD3-51B2D51F9445Q53495486-A4278EB2-9191-41B6-B371-1EA937E3487FQ55406008-641FC72E-850D-4E3C-A08D-D948324710BE
P50
description
Duits natuurkundige
@nl
deutschamerikanischer Wissenschaftler, Hochschullehrer und Fachbuchautor
@de
electrical engineer
@en
professor académico alemão
@pt
tysk professor
@da
tysk professor
@sv
فیزیکدان و مهندس آلمانی
@fa
name
Gerhard Klimeck
@ast
Gerhard Klimeck
@ca
Gerhard Klimeck
@da
Gerhard Klimeck
@de
Gerhard Klimeck
@en
Gerhard Klimeck
@es
Gerhard Klimeck
@fr
Gerhard Klimeck
@nds
Gerhard Klimeck
@nl
Gerhard Klimeck
@pl
type
label
Gerhard Klimeck
@ast
Gerhard Klimeck
@ca
Gerhard Klimeck
@da
Gerhard Klimeck
@de
Gerhard Klimeck
@en
Gerhard Klimeck
@es
Gerhard Klimeck
@fr
Gerhard Klimeck
@nds
Gerhard Klimeck
@nl
Gerhard Klimeck
@pl
altLabel
gekco
@en
prefLabel
Gerhard Klimeck
@ast
Gerhard Klimeck
@ca
Gerhard Klimeck
@da
Gerhard Klimeck
@de
Gerhard Klimeck
@en
Gerhard Klimeck
@es
Gerhard Klimeck
@fr
Gerhard Klimeck
@nds
Gerhard Klimeck
@nl
Gerhard Klimeck
@pl
P106
P1015
P214
P227
P244
P269
P646
P1015
P1053
A-1414-2012