La2Hf2O7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy
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La2Hf2O7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy
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im Oktober 2004 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
@nl
наукова стаття, опублікована в жовтні 2004
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La2Hf2O7 high-κ gate dielectric grown directly on Si
@nl
La2Hf2O7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy
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La2Hf2O7 high-κ gate dielectric grown directly on Si
@nl
La2Hf2O7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy
@en
prefLabel
La2Hf2O7 high-κ gate dielectric grown directly on Si
@nl
La2Hf2O7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy
@en
P2093
P2860
P356
P1476
La2Hf2O7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy
@en
P2093
A. Dimoulas
A. Travlos
G. Vellianitis
M. Fanciulli
Z. M. Rittersma
P2860
P304
P356
10.1063/1.1806556
P407
P577
2004-10-11T00:00:00Z