Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors
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Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.Giant Negative Electrocaloric Effects of Hf0.5 Zr0.5 O2 Thin Films.Understanding the formation of the metastable ferroelectric phase in hafnia-zirconia solid solution thin films.Si Doped Hafnium Oxide-A “Fragile” Ferroelectric SystemDoped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitorsA comprehensive study on the structural evolution of HfO2 thin films doped with various dopantsStructural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films
P2860
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P2860
Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors
description
im Mai 2016 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
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наукова стаття, опублікована в травні 2016
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name
Physical Mechanisms behind the ...... Based Ferroelectric Capacitors
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Physical Mechanisms behind the ...... Based Ferroelectric Capacitors
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type
label
Physical Mechanisms behind the ...... Based Ferroelectric Capacitors
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Physical Mechanisms behind the ...... Based Ferroelectric Capacitors
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prefLabel
Physical Mechanisms behind the ...... Based Ferroelectric Capacitors
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Physical Mechanisms behind the ...... Based Ferroelectric Capacitors
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P2093
P2860
P356
P1476
Physical Mechanisms behind the ...... Based Ferroelectric Capacitors
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P2093
Andrea Padovani
Everett D. Grimley
Franz Paul Gustav Fengler
James M. LeBeau
Luca Larcher
Milan Pešić
Stefan Slesazeck
Thomas Mikolajick
Tony Schenk
Uwe Schroeder
P2860
P304
P356
10.1002/ADFM.201600590
P407
P577
2016-05-06T00:00:00Z