about
Spatially resolved resonant tunneling on single atoms in silicon.Electrically controlling single-spin qubits in a continuous microwave fieldDonor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory.Silicon quantum processor with robust long-distance qubit couplings.Atomically engineered electron spin lifetimes of 30 s in silicon.Effect of strain on the electronic and optical properties of Ge-Si dome shaped nanocrystals.Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures.High precision quantum control of single donor spins in silicon.Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot.Lifetime-enhanced transport in silicon due to spin and valley blockade.Coherent control of a single ²⁹Si nuclear spin qubit.Spin-lattice relaxation times of single donors and donor clusters in silicon.Spin blockade and exchange in Coulomb-confined silicon double quantum dots.Spatially resolving valley quantum interference of a donor in silicon.Spin readout and addressability of phosphorus-donor clusters in silicon.Noninvasive spatial metrology of single-atom devices.Electrically Tunable Bandgaps in Bilayer MoS₂.Stark tuning of the charge states of a two-donor molecule in silicon.Mapping donor electron wave function deformations at a sub-Bohr orbit resolution.Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot.Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETsSwitching Mechanism and the Scalability of Vertical-TFETsSensitivity Challenge of Steep TransistorsDramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching ApplicationsA Multiscale Modeling of Triple-Heterojunction Tunneling FETsCombination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling HeterojunctionsIII-N heterostructure devices for low-power logicThickness Engineered Tunnel Field-Effect Transistors Based on PhosphoreneCan Homojunction Tunnel FETs Scale Below 10 nm?Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FETDesign Rules for High Performance Tunnel Transistors From 2-D MaterialsFrom Fowler–Nordheim to Nonequilibrium Green’s Function Modeling of TunnelingNovel III-N heterostructure devices for low-power logic and moreTransport of spin qubits with donor chains under realistic experimental conditionsUniversal Behavior of Atomistic Strain in Self-Assembled Quantum DotsA predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations2D tunnel transistors for ultra-low power applications: Promises and challengesAchieving a higher performance in bilayer graphene FET - strain engineeringAtomistic simulation of steep subthreshold slope Bi-layer MoS 2 transistorsDesigning a large scale quantum computer with atomistic simulations
P50
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P50
description
Forscher
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chercheur
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investigador
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onderzoeker
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հետազոտող
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Rajib Rahman
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Rajib Rahman
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Rajib Rahman
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Rajib Rahman
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Rajib Rahman
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Rajib Rahman
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Rajib Rahman
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Rajib Rahman
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Rajib Rahman
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Rajib Rahman
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রাজিব রহমান
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P108
P106
P1153
18037972100
P31
P496
0000-0003-1649-823X