High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films
about
n-Dopants Based on Dimers of Benzimidazoline Radicals: Structures and Mechanism of Redox Reactions.Remarkable enhancement of charge carrier mobility of conjugated polymer field-effect transistors upon incorporating an ionic additive.Patterning technology for solution-processed organic crystal field-effect transistors.Mechanistic study on the solution-phase n-doping of 1,3-dimethyl-2-aryl-2,3-dihydro-1H-benzoimidazole derivatives.Solvent basicity promotes the hydride-mediated electron transfer doping of carbon nanotubes.Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.Doped organic transistors operating in the inversion and depletion regime.Realizing Efficient Lead-Free Formamidinium Tin Triiodide Perovskite Solar Cells via a Sequential Deposition Route.Organic semiconductor crystals.Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors.Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors.n-Type Doped Conjugated Polymer for Nonvolatile Memory.Computational insights into intriguing vibration-induced pulsing diradical character in perfluoropentacene and the perfluorination effect.Hall Effect in Bulk-Doped Organic Single Crystals.Organic metal engineering for enhanced field-effect transistor performance.Effective Solution- and Vacuum-Processed n-Doping by Dimers of Benzimidazoline RadicalsAmbipolar charge-transport properties in 4,10-dihalogenated anthanthrone crystals: a theoretical study
P2860
Q35931283-B6AC4823-5DD9-4632-9559-6FFBC7977192Q37056183-7246E529-EEFF-4010-A528-5B143CF4C4A5Q37386490-FEA67DBD-D5D2-4258-AE68-80CD57854ACBQ37715625-332E12DE-7F39-4B04-860D-A4930DEAC281Q38641922-014907E2-AC4B-48AD-B84E-19714E6F64A6Q39019338-04915496-750F-4BED-AFB6-514FF2EFAA45Q39315820-A43C15B1-4F09-4292-8507-B86446BA8A33Q47240926-7A978FC3-7957-47D7-B171-3208E4C51C16Q47302702-A48CC724-3343-4851-BCB6-E2E63FE1C1F5Q47318986-19E779DE-B8D9-49BB-AABA-825E17740022Q48165503-0A32B8CF-B4C6-4B79-BD5F-41D910C9946CQ50595188-96523B29-FA9A-4B7A-A88E-1A40B0EA8BFDQ51308185-317EC29B-9BFC-4FB7-8FAB-0C5736D83FCDQ53351398-023F3E00-817D-4800-9F42-602D494BE5E2Q53451507-5BDE7054-863F-43E6-BAFF-CA490E6A0365Q57563170-7EAA8E4D-FC2A-4364-8714-594621904F19Q57639614-4B6715C5-D057-4912-9507-BFD5DF880EAA
P2860
High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films
description
article
@en
im Juli 2013 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в липні 2013
@uk
name
High Mobility N-Type Transisto ...... ylethynyl)pentacene Thin Films
@en
High Mobility N-Type Transisto ...... ylethynyl)pentacene Thin Films
@nl
type
label
High Mobility N-Type Transisto ...... ylethynyl)pentacene Thin Films
@en
High Mobility N-Type Transisto ...... ylethynyl)pentacene Thin Films
@nl
prefLabel
High Mobility N-Type Transisto ...... ylethynyl)pentacene Thin Films
@en
High Mobility N-Type Transisto ...... ylethynyl)pentacene Thin Films
@nl
P2093
P2860
P50
P356
P1433
P1476
High Mobility N-Type Transisto ...... ylethynyl)pentacene Thin Films
@en
P2093
Alberto Salleo
Benjamin D. Naab
Björn Lussem
P2860
P304
P356
10.1002/ADMA.201205098
P407
P577
2013-07-01T00:00:00Z