about
The effect of substrate type on SiC nanowire orientation.Characterization of HVPE GaN layers by atomic force microscopy and Raman spectroscopyLogic with memory: and gates made of organic and inorganic memristive devicesEngineering Single Defects in Silicon Carbide Bulk, Nanostructures and DevicesActivation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidationBuffer Layer Optimization for the Growth of State of the Art 3C-SiC/SiOptimization of a buffer layer for cubic silicon carbide growth on silicon substratesEmission Enhancement of SiC/SiO 2 Core/Shell Nanowires Induced by the Oxide ShellCarburisation layers for the growth of silicon carbide on siliconHomo and hetero epitaxy of Germanium using isobutylgermaneMOVPE growth of homoepitaxial germaniumCrystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-SapphireGrowth of germanium nanowires with isobuthyl germaneExtra-long and taper-free germanium nanowires: use of an alternative Ge precursor for longer nanostructures
P50
Q33451321-BC8B42FB-9D76-40F5-8A7D-9FE8F433BCE1Q57890591-2AE60DC1-616A-4CE0-B925-AFC83C4A9711Q59398579-0F2C1647-ABBE-437D-B45E-C39FDAE4F776Q59441806-DBEAAD85-EAB6-4A46-943A-E24D95DFD0E6Q59457925-3BC6BA9E-ACE0-4D46-9AAE-E4C45422307DQ60081580-9F138A4A-74E5-4CA4-831F-23EAF456444CQ60081621-6414DDD2-6DF4-4933-95A3-57614470036EQ60119626-B1AF3863-4DDF-41E2-986C-E680BC50AD5EQ60299628-D1372F94-C1A7-4507-904C-14E654FE6A8FQ60395780-0571EB05-E511-4D7E-BA1A-1F381C3B9B82Q60395782-DF7986A8-0712-4233-A5C6-4D3C995DD402Q88932718-93B38E79-A60A-4216-B657-A15E0133F657Q90322575-9CEB3438-CF79-4405-A083-98ED13C5BE82Q91840772-FA43D928-A75F-486B-B66F-3688053D3728
P50
description
researcher, ORCID id # 0000-0001-8992-0249
@en
wetenschapper
@nl
name
M Bosi
@ast
M Bosi
@en
M Bosi
@es
M Bosi
@nl
type
label
M Bosi
@ast
M Bosi
@en
M Bosi
@es
M Bosi
@nl
prefLabel
M Bosi
@ast
M Bosi
@en
M Bosi
@es
M Bosi
@nl
P106
P1153
9232844900
P31
P496
0000-0001-8992-0249