Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
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Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
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im Januar 2016 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
@nl
наукова стаття, опублікована в січні 2016
@uk
name
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
@en
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
@nl
type
label
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
@en
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
@nl
prefLabel
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
@en
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
@nl
P2093
P356
P1476
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
@en
P2093
A. Lohrmann
B. C. Gibson
B. C. Johnson
D. W. M. Lau
J. C. McCallum
J. R. Klein
T. Ohshima
P304
P356
10.1063/1.4939906
P407
P577
2016-01-11T00:00:00Z