about
Synthesis and properties of antimonide nanowires.Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study.Measurements of light absorption efficiency in InSb nanowires.Single InAs/GaSb nanowire low-power CMOS inverter.A Bone Sample Containing a Bone Graft Substitute Analyzed by Correlating Density Information Obtained by X-ray Micro Tomography with Compositional Information Obtained by Raman Microscopy.Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors.Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si.Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade.Diameter-Dependent photocurrent in InAsSb nanowire infrared photodetectors.Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor.Electrical properties of GaSb/InAsSb core/shell nanowires.Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.Analysing the capacitance-voltage measurements of vertical wrapped-gated nanowires.Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions.Growth of InAs/InP core-shell nanowires with various pure crystal structures.Quantized Conduction and High Mobility in Selectively Grown In(x)Ga(1-x)As NanowiresTime-Resolved X-ray Diffraction Investigation of the Modified Phonon Dispersion in InSb NanowiresTemperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance–voltage methodUnipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistorsCorrelation-Induced Conductance Suppression at Level Degeneracy in a Quantum DotDoping Incorporation in InAs nanowires characterized by capacitance measurementsTemperature dependent properties of InSb and InAs nanowire field-effect transistorsComparing InSb, InAs, and InSb/InAs nanowire MOSFETsGiant, Level-DependentgFactors in InSb Nanowire Quantum DotsGrowth of vertical InAs nanowires on heterostructured substratesInSb heterostructure nanowires: MOVPE growth under extreme lattice mismatchCharacterization of GaSb nanowires grown by MOVPEDevelopment of a Vertical Wrap-Gated InAs FETGaAs/GaSb nanowire heterostructures grown by MOVPEHigh‐Quality InAs/InSb Nanowire Heterostructures Grown by Metal–Organic Vapor‐Phase EpitaxyTemperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPEImpact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistorsInAs nanowire metal-oxide-semiconductor capacitorsHard X-ray Detection Using a Single 100 nm Diameter NanowireGaSb nanowire single-hole transistorCoupling between lateral modes in a vertical resonant tunneling structurePerformance and design of vertical, ballistic, heterostructure field-effect transistorsIII-V Nanowires—Extending a Narrowing RoadHeterostructure Barriers in Wrap Gated Nanowire FETsVertical InAs Nanowire Wrap Gate Transistors on Si Substrates
P50
Q38100016-2C488AC0-74D9-41C4-8492-D9EFA61314C6Q38679191-C5375FA9-30CC-4B19-92DE-827C09A6E92CQ39970046-B2B19316-4545-46EB-B7EC-DDA2E0A0C3D0Q40067468-3308C821-0364-476B-A388-80275CF33A81Q42227807-13F19858-699B-4C88-BB7D-390207B2C74AQ43680381-4B5C69FB-BD26-4EA3-AD1A-957B135CAE09Q46306089-77CFDD42-DF2E-48E0-AFAB-3E9D2EBB389EQ48019382-ECDCCA8E-3D7C-49F2-94DB-785F008AAFF2Q50494161-377C6DC8-AEE4-471C-9355-44AABCBA4D64Q51134206-E6DA94AC-5BE8-46A8-B621-87E19E81856AQ51507783-83E1E513-C051-4104-AC28-1D7556E972C0Q51603906-C3261AF0-CC06-483B-967D-F29CA8182B71Q51865696-66E73F48-76C3-49DD-B963-A4B37C6F28B8Q53625932-7964190C-FFCD-4E88-94C4-4985EF1C10E3Q53973161-C58B98C6-D8B7-47F8-AE24-7B5C8727AB4EQ57158450-85AA8C3F-F441-4D0C-8D27-453963488042Q57189005-56192914-3E6A-499E-B6D7-952008ED4E2FQ57189050-F286465B-D58D-43E0-BE00-A16B31CF219EQ57189057-C68BA9FB-E729-4FC2-B184-42E6CCB43B18Q57189066-27659E7D-0852-4348-B2C2-8909ACAB2279Q57189073-3A1E6671-81FD-487E-B780-554C77E7BA07Q57189079-10E0737C-E424-4C24-B3E3-B9FADD064B2AQ57189085-B9CDE106-9101-4A13-BA84-BBEE05661726Q57189095-28EBDAD2-C31D-495C-A6D3-355C37112436Q57189099-243D670A-F78F-4A02-A968-476D833FE7A5Q57189102-8B40E7CD-CE3B-4AD5-AB49-904EBE38C513Q57189107-92FC500B-B63B-45D1-909D-554F0876FBBBQ57189110-8D210865-B1B2-452A-8514-FFAC799BF399Q57189113-29DB80F4-B975-4557-A7BF-18836AC6CB2FQ57189115-7F96E323-4CAD-4EFB-97FD-CF30425AA040Q57189126-45125BE6-7338-480D-97E9-9C7FBA489F2DQ57784388-2F4837A5-4ECB-48C2-9B17-2E27348AE32AQ58071940-1B01F944-F9C8-4CAB-844A-99167A379AC1Q58374188-6C17BC4F-A1B0-4C29-8F5B-B10CA47A23E0Q59439320-60217418-10BC-4C2A-A10C-1C89E0EFD5E6Q59439521-7B889873-BCA9-46EE-9A4B-A4D1E945994AQ59439608-39DEC656-2A12-40DC-A927-31C31E5DC0E2Q59451046-4308B233-F58B-40A8-928B-7D590417EED5Q59451066-06365FBE-5203-413C-9114-D55ED2B9DB0CQ59451071-C168F492-FEBB-4AB0-998B-71EE84CD0A7C
P50
description
Zweeds onderzoeker
@nl
researcher ORCID ID = 0000-0002-1039-5849
@en
name
Lars-Erik Wernersson
@ast
Lars-Erik Wernersson
@en
Lars-Erik Wernersson
@es
Lars-Erik Wernersson
@ga
Lars-Erik Wernersson
@nl
Lars-Erik Wernersson
@sl
Lars-Erik Wernersson
@sq
type
label
Lars-Erik Wernersson
@ast
Lars-Erik Wernersson
@en
Lars-Erik Wernersson
@es
Lars-Erik Wernersson
@ga
Lars-Erik Wernersson
@nl
Lars-Erik Wernersson
@sl
Lars-Erik Wernersson
@sq
prefLabel
Lars-Erik Wernersson
@ast
Lars-Erik Wernersson
@en
Lars-Erik Wernersson
@es
Lars-Erik Wernersson
@ga
Lars-Erik Wernersson
@nl
Lars-Erik Wernersson
@sl
Lars-Erik Wernersson
@sq
P106
P108
P1153
7004168675
P21
P27
P31
P496
0000-0002-1039-5849