Phase Modulators Based on High Mobility Ambipolar ReSe Field-Effect Transistors
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Phase Modulators Based on High Mobility Ambipolar ReSe Field-Effect Transistors
description
article publié dans la revue scientifique Scientific Reports
@fr
im August 2018 veröffentlichter wissenschaftlicher Artikel
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scientific article published in Scientific Reports
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wetenschappelijk artikel
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наукова стаття, опублікована в серпні 2018
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name
Phase Modulators Based on High Mobility Ambipolar ReSe Field-Effect Transistors
@en
Phase Modulators Based on High Mobility Ambipolar ReSe Field-Effect Transistors
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type
label
Phase Modulators Based on High Mobility Ambipolar ReSe Field-Effect Transistors
@en
Phase Modulators Based on High Mobility Ambipolar ReSe Field-Effect Transistors
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prefLabel
Phase Modulators Based on High Mobility Ambipolar ReSe Field-Effect Transistors
@en
Phase Modulators Based on High Mobility Ambipolar ReSe Field-Effect Transistors
@nl
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Phase Modulators Based on High Mobility Ambipolar ReSe Field-Effect Transistors
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P2093
Aldo Raeliarijaona
Amber McCreary
Angela R Hight Walker
Bridget Isenberg
Carlos Garcia
Daniel Rhodes
Nihar R Pradhan
Shahriar Memaran
Simin Feng
Stephen McGill
P2860
P356
10.1038/S41598-018-30969-7
P407
P577
2018-08-24T00:00:00Z
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P818
1808.03621