First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC
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First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC
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im Februar 2018 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
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наукова стаття, опублікована в лютому 2018
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First principles predictions o ...... of divacancy defects in 4H–SiC
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First principles predictions o ...... of divacancy defects in 4H–SiC
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First principles predictions o ...... of divacancy defects in 4H–SiC
@en
First principles predictions o ...... of divacancy defects in 4H–SiC
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First principles predictions o ...... of divacancy defects in 4H–SiC
@en
First principles predictions o ...... of divacancy defects in 4H–SiC
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P2093
P50
P356
P1476
First principles predictions o ...... of divacancy defects in 4H–SiC
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P2093
Igor A Abrikosov
Viktor Ivády
P304
P356
10.1088/1367-2630/AAA752
P407
P577
2018-02-15T00:00:00Z
P818
1708.04508