about
Electron-vibration coupling induced renormalization in the photoemission spectrum of diamondoids.Optical absorption of diamond nanocrystals from ab initio density-functional calculationsCoherent control of single spins in silicon carbide at room temperatureSingle nickel-related defects in molecular-sized nanodiamonds for multicolor bioimaging: an ab initio study.Computational design of in vivo biomarkers.Harnessing no-photon exciton generation chemistry to engineer semiconductor nanostructures.Ab Initio Optoelectronic Properties of Silicon Nanoparticles: Excitation Energies, Sum Rules, and Tamm-Dancoff Approximation.Readout and control of a single nuclear spin with a metastable electron spin ancilla.The spin-spin zero-field splitting tensor in the projector-augmented-wave method.Electronic and optical properties of pure and modified diamondoids studied by many-body perturbation theory and time-dependent density functional theory.Optical Gaps in Pristine and Heavily Doped Silicon Nanocrystals: DFT versus Quantum Monte Carlo Benchmarks.Hybrid-DFT + V w method for band structure calculation of semiconducting transition metal compounds: the case of cerium dioxide.Protecting a Diamond Quantum Memory by Charge State Control.Surface-Mediated Energy Transfer and Subsequent Photocatalytic Behavior in Silicon Carbide Colloid Solutions.First principles study of point defects in SnS.The absorption of oxygenated silicon carbide nanoparticles.A silicon carbide room-temperature single-photon source.Electrically and mechanically tunable electron spins in silicon carbide color centers.Room temperature quantum emission from cubic silicon carbide nanoparticles.Quantum-confined single photon emission at room temperature from SiC tetrapods.Theoretical studies on nitrogen - oxygen complexes in siliconAb initio description of highly correlated states in defects for realizing quantum bitsSpin and photophysics of carbon-antisite vacancy defect in4Hsilicon carbide: A potential quantum bitIdentification of Intrinsic Defects in SiC: Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental ApproachesIdentification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approachesDivacancy in 4H-SiCPublisher’s Note: Divacancy in 4H-SiC [Phys. Rev. Lett.96, 055501 (2006)]Identification of divacancies in 4H-SiCIdentification of the Carbon Antisite-Vacancy Pair in4H-SiCStrongly inhomogeneous distribution of spectral properties of silicon-vacancy color centers in nanodiamondsElectronic Structure of the Silicon Vacancy Color Center in DiamondPhotoluminescence, infrared, and Raman spectra of co-doped Si nanoparticles from first principlesColor Centers in Hexagonal Boron Nitride Monolayers: A Group Theory and Ab Initio AnalysisFirst principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiCIdentification of the binding site between bovine serum albumin and ultrasmall SiC fluorescent biomarkersHigh-Throughput Study of Compositions and Optical Properties in Heavily Co-Doped Silicon NanoparticlesChemical Transformation of Carboxyl Groups on the Surface of Silicon Carbide Quantum DotsExotic phase Si nanoparticles and Si-ZnS nanocomposites: New paradigms to improve the efficiency of MEG solar cellsFirst Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit ApplicationFluorine Modification of the Surface of Diamondoids: A Time-Dependent Density Functional Study
P50
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P50
description
hulumtues
@sq
researcher
@en
wetenschapper
@nl
հետազոտող
@hy
name
Adam Gali
@ast
Adam Gali
@en
Adam Gali
@es
Adam Gali
@nl
Adam Gali
@sl
type
label
Adam Gali
@ast
Adam Gali
@en
Adam Gali
@es
Adam Gali
@nl
Adam Gali
@sl
altLabel
Ádám Gali
@en
prefLabel
Adam Gali
@ast
Adam Gali
@en
Adam Gali
@es
Adam Gali
@nl
Adam Gali
@sl
P106
P1153
7004204092
P21
P2798
P31
P496
0000-0002-3339-5470