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High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors.Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.Gate-tunable resonant tunneling in double bilayer graphene heterostructures.ReS2-based interlayer tunnel field effect transistor
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description
researcher ORCID ID = 0000-0002-8287-5083
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wetenschapper
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name
Sangwoo Kang
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Sangwoo Kang
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Sangwoo Kang
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Sangwoo Kang
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type
label
Sangwoo Kang
@ast
Sangwoo Kang
@en
Sangwoo Kang
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Sangwoo Kang
@nl
prefLabel
Sangwoo Kang
@ast
Sangwoo Kang
@en
Sangwoo Kang
@es
Sangwoo Kang
@nl
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P1153
55731434400
7405686902
P31
P496
0000-0002-8287-5083