ReS2-based interlayer tunnel field effect transistor

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ReS2-based interlayer tunnel field effect transistor

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im Dezember 2017 veröffentlichter wissenschaftlicher Artikel

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wetenschappelijk artikel

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наукова стаття, опублікована в грудні 2017

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ReS2-based interlayer tunnel field effect transistor

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ReS2-based interlayer tunnel field effect transistor

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ReS2-based interlayer tunnel field effect transistor

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ReS2-based interlayer tunnel field effect transistor

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ReS2-based interlayer tunnel field effect transistor

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ReS2-based interlayer tunnel field effect transistor

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P1476

ReS2-based interlayer tunnel field effect transistor

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P2093

Amithraj Valsaraj

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Chris M. Corbet

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Leonard F. Register

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Nitin Prasad

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Omar B. Mohammed

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Sanjay K. Banerjee

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P2860

Atomically Thin MoS 2 : A New Direct-Gap Semiconductor

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set

Accurate and simple analytic representation of the electron-gas correlation energy

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set

Robust Direct Bandgap Characteristics of One- and Two-Dimensional ReS2

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

One-dimensional electrical contact to a two-dimensional material.

Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.

Van der Waals heterostructures.

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures.

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245701

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P31

scholarly article

P356

10.1063/1.5004038

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P433

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P478

122

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P577

2017-12-28T00:00:00Z

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