about
Evidence of Formation of Superdense Nonmagnetic CobaltVersatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators.Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface.Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits.High density nonmagnetic cobalt in thin films.In Situ Observation of Initial Stage in Dielectric Growth and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces.Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.ReS2-based interlayer tunnel field effect transistorStructural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam EpitaxyCMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin filmsDensity-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe_{2}Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 HeterostructuresVisualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors
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description
researcher ORCID ID = 0000-0003-3001-3171
@en
wetenschapper
@nl
name
Hema C. P. Movva
@ast
Hema C. P. Movva
@en
Hema C. P. Movva
@es
Hema C. P. Movva
@nl
type
label
Hema C. P. Movva
@ast
Hema C. P. Movva
@en
Hema C. P. Movva
@es
Hema C. P. Movva
@nl
prefLabel
Hema C. P. Movva
@ast
Hema C. P. Movva
@en
Hema C. P. Movva
@es
Hema C. P. Movva
@nl
P106
P1153
51764085900
P31
P496
0000-0003-3001-3171