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Insights from simple models for surface states in nanostructuresTransferable tight-binding model for strained group IV and III-V materials and heterostructuresUnfolding and effective bandstructure calculations as discrete real- and reciprocal-space operationsTight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolutionAn environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validationBrillouin zone unfolding method for effective phonon spectraComputational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding methodElectron transport in nano-scaled piezoelectronic devicesEmpirical tight binding parameters for GaAs and MgO with explicit basis through DFT mappingGiant quasiparticle bandgap modulation in graphene nanoribbons supported on weakly interacting surfacesCalculation of phonon spectrum and thermal properties in suspended 〈100〉 In X Ga1−X As nanowiresEffects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wellsAccurate six-band nearest-neighbor tight-binding model for the π-bands of bulk graphene and graphene nanoribbonsAtomistic nanoelectronic device engineering with sustained performances up to 1.44 PFlop/sCurrent density and continuity in discretized modelsEffects of interface roughness scattering on radio frequency performance of silicon nanowire transistorsQuantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculationsCurrent density and continuity in discretized modelsDesign Guidelines for True Green LEDs and High Efficiency Photovoltaics Using ZnSe/GaAs Digital AlloysStrain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrizationGate-inducedg-factor control and dimensional transition for donors in multivalley semiconductorsNon-primitive rectangular cells for tight-binding electronic structure calculationsValley degeneracies in (111) silicon quantum wellsElectronic structure and transmission characteristics of SiGe nanowiresMultiband transmission calculations for nanowires using an optimized renormalization methodValley splitting in finite barrier quantum wellsA Study of Alloyed Nanowires from Two Perspectives: Approximate Dispersion and TransmissionApproximate bandstructures of semiconductor alloys from tight-binding supercell calculationsBrillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with aSi∕Getight-binding parameterizationEvolution time and energy uncertaintyThe Electronic Structure and Transmission Characteristics of Disordered AlGaAs NanowiresValley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorderAllowed wavevectors under the application of incommensurate periodic boundary conditionsConduction-band tight-binding description for Si applied to P donorsAtomistic Approach for Nanoscale Devices at the Scaling Limit and Beyond– Valley Splitting in SiPractical application of zone-folding concepts in tight-binding calculationsQuantum cascade laser gain medium modeling using a second-nearest-neighbor tight-binding modelThe discretized Schrödinger equation for the finite square well and its relationship to solid-state physicsValley splitting in V-shaped quantum wellsThe discretized Schrödinger equation and simple models for semiconductor quantum wells
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P50
description
researcher ORCID ID = 0000-0002-5068-8590
@en
wetenschapper
@nl
name
Timothy Boykin
@ast
Timothy Boykin
@en
Timothy Boykin
@es
Timothy Boykin
@nl
type
label
Timothy Boykin
@ast
Timothy Boykin
@en
Timothy Boykin
@es
Timothy Boykin
@nl
prefLabel
Timothy Boykin
@ast
Timothy Boykin
@en
Timothy Boykin
@es
Timothy Boykin
@nl
P106
P31
P496
0000-0002-5068-8590