Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping
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Performance of arsenene and antimonene double-gate MOSFETs from first principles.Transferable tight-binding model for strained group IV and III-V materials and heterostructuresTight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolutionEfficient and realistic device modeling from atomic detail to the nanoscaleElectron transport in nano-scaled piezoelectronic devices
P2860
Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping
description
wetenschappelijk artikel
@nl
наукова стаття, опублікована в січні 2013
@uk
name
Empirical tight binding parame ...... icit basis through DFT mapping
@en
Empirical tight binding parame ...... icit basis through DFT mapping
@nl
type
label
Empirical tight binding parame ...... icit basis through DFT mapping
@en
Empirical tight binding parame ...... icit basis through DFT mapping
@nl
prefLabel
Empirical tight binding parame ...... icit basis through DFT mapping
@en
Empirical tight binding parame ...... icit basis through DFT mapping
@nl
P2860
P50
P1476
Empirical tight binding parame ...... icit basis through DFT mapping
@en
P2093
Zhengping Jiang
P2860
P2888
P356
10.1007/S10825-013-0436-0
P577
2013-01-31T00:00:00Z