about
In-plane thermal conductivity of sub-20 nm thick suspended mono-crystalline Si layers.Laser Fabrication of Polymer Ferroelectric Nanostructures for Nonvolatile Organic Memory Devices.Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology.Enabling electromechanical transduction in silicon nanowire mechanical resonators fabricated by focused ion beam implantationEfficient light trapping and broadband absorption of the solar spectrum in nanopillar arrays decorated with deep-subwavelength sidewall featuresFunctional oxide nanostructures written by EBL on insulating single crystal substratesFabrication of complementary metal-oxide-semiconductor integrated nanomechanical devices by ion beam patterningTop-down silicon microcantilever with coupled bottom-up silicon nanowire for enhanced mass resolutionHigh-sensitivity linear piezoresistive transduction for nanomechanical beam resonatorsA statistical analysis of nanocavities replication applied to injection mouldingEvaluating the compressive stress generated during fabrication of Si doubly clamped nanobeams with AFMResonant tunnelling features in a suspended silicon nanowire single-hole transistorDual Function Polyvinyl Alcohol Based Oxide Precursors for Nanoimprinting and Electron Beam LithographyFabrication of functional electromechanical nanowire resonators by focused ion beam implantationFabrication of functional electromechanical nanowire resonators by focused ion-beam (FIB) implantationTuning piezoresistive transduction in nanomechanical resonators by geometrical asymmetriesPost-CMOS Integration of Nanomechanical Devices by Direct Ion Beam Irradiation of SiliconFabrication Of Nanomechanical Devices Integrated In CMOS Circuits By Ion Beam Exposure Of SiliconElectron- and ion-beam lithography for the fabrication of nanomechanical devices integrated on CMOS circuitsUsing electron and ion beams on carbon nanotube-based devices. Effects and considerations for nanofabricationMass measurements based on nanomechanical devices: differential measurementsNanomagnets with high shape anisotropy and strong crystalline anisotropy: perspectives on magnetic force microscopyNanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistorsMulti-Frequency Resonance Behaviour of a Si FractalNEMS Resonator
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P50
description
forsker
@nb
onderzoeker
@nl
researcher ORCID ID = 0000-0001-7007-9277
@en
name
J. Llobet
@ast
J. Llobet
@nl
Jordi Llobet
@en
Jordi Llobet
@nb
type
label
J. Llobet
@ast
J. Llobet
@nl
Jordi Llobet
@en
Jordi Llobet
@nb
altLabel
J. Llobet
@en
prefLabel
J. Llobet
@ast
J. Llobet
@nl
Jordi Llobet
@en
Jordi Llobet
@nb
P106
P31
P496
0000-0001-7007-9277