about
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping.Electrically controlling single-spin qubits in a continuous microwave fieldBell's inequality violation with spins in silicon.Storing quantum information for 30 seconds in a nanoelectronic device.An addressable quantum dot qubit with fault-tolerant control-fidelity.A dressed spin qubit in silicon.Single atom devices by ion implantation.A two-qubit logic gate in silicon.Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot.Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking.Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readoutSpin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dotGigahertz Single-Electron Pumping Mediated by Parasitic StatesHigh-fidelity adiabatic inversion of a 31P electron spin qubit in natural siliconA single-atom quantum memory in siliconMicrosecond resolution of quasiparticle tunneling in the single-Cooper-pair transistorCoherent spin control of s-, p-, d- and f-electrons in a silicon quantum dotOperation of a silicon quantum processor unit cell above one kelvinSingle-spin qubits in isotopically enriched silicon at low magnetic fieldA silicon quantum-dot-coupled nuclear spin qubit
P50
Q35982018-150A1803-8532-41CB-B337-31F5628A48FAQ36268187-EFB931E1-E92D-48E1-87DE-31FBB3D18529Q48103832-EA9E7612-AC81-4958-AE8C-E35F2CAD33E7Q48261694-94AB9CE4-9A7C-4139-8105-7FECE8859DECQ48261705-E37B8E2B-8570-4479-9318-1A9B39099F93Q48264965-9C49C615-D304-48BB-95D4-C2A94250F611Q51497235-D0DEE26C-8E56-4FC7-BAE2-D80D06182C60Q51576519-981266B9-35DB-427F-B6A3-66376E763EE8Q51576527-DC05204F-ADE0-4923-80A8-9AC22AADD149Q51581042-A5FED260-8479-4606-885D-4793F37DB4F7Q58097676-80D95583-5CF4-41B6-8B1A-F5BC4C8E4F13Q58782882-D83EB3E6-CA74-4E60-A768-0E17C3812A85Q58813406-00472201-5EFA-4C2B-92D7-8B08D680F718Q59422928-78304506-DE97-4411-9EEB-42AC956FABC2Q59423333-2779994A-E8CE-4D97-AA48-EC9B0390B457Q79201260-AB102238-F177-43D5-BECE-920854AE0F51Q89664285-906856F2-2EBA-4913-9528-6A4166DF82F7Q90871764-803BE8CC-636E-4208-8687-20A90C55DD31Q91656345-C3831031-ED70-4ABC-8634-F9B5DDE901D8Q91826713-2371B96C-63B2-43DB-B641-46F099C3280F
P50
description
researcher
@en
wetenschapper
@nl
հետազոտող
@hy
name
Fay E Hudson
@ast
Fay E Hudson
@es
Fay E. Hudson
@en
Fay E. Hudson
@nl
type
label
Fay E Hudson
@ast
Fay E Hudson
@es
Fay E. Hudson
@en
Fay E. Hudson
@nl
altLabel
F. E. Hudson
@en
Fay Hudson
@en
prefLabel
Fay E Hudson
@ast
Fay E Hudson
@es
Fay E. Hudson
@en
Fay E. Hudson
@nl
P106
P31
P496
0000-0003-0134-3657