Storing quantum information for 30 seconds in a nanoelectronic device.
about
Quantum dot spin coherence governed by a strained nuclear environment.Doppler effect induced spin relaxation boomSuppressing qubit dephasing using real-time Hamiltonian estimation.Electron spin coherence near room temperature in magnetic quantum dotsA quantum spin-probe molecular microscope.Electrically controlling single-spin qubits in a continuous microwave fieldScaling of decoherence for a system of uncoupled spin qubits.Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots.Noise filtering of composite pulses for singlet-triplet qubitsCharacterizing Si:P quantum dot qubits with spin resonance techniquesGate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnetHeavy-Hole States in Germanium Hut Wires.A reconfigurable cryogenic platform for the classical control of quantum processors.Isotopically enhanced triple-quantum-dot qubit.Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry.Silicon quantum processor with robust long-distance qubit couplings.Repeated quantum error correction on a continuously encoded qubit by real-time feedback.Manipulating quantum information with spin torque.Fan-out Estimation in Spin-based Quantum Computer Scale-up.Atomically engineered electron spin lifetimes of 30 s in silicon.Silicon CMOS architecture for a spin-based quantum computer.Coherent coupling between a quantum dot and a donor in silicon.Application of optimal band-limited control protocols to quantum noise sensing.A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9.Donor qubits in silicon: Electrical control of nuclear spins.Bell's inequality violation with spins in silicon.Nano-beam and nano-target effects in ion radiation.A dressed spin qubit in silicon.Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor.Vibration-induced electrical noise in a cryogen-free dilution refrigerator: Characterization, mitigation, and impact on qubit coherence.Spatial metrology of dopants in silicon with exact lattice site precision.Qubit Noise Spectroscopy for Non-Gaussian Dephasing Environments.Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon.High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D(-) Charge State.Coherent control of a single ²⁹Si nuclear spin qubit.Palladium gates for reproducible quantum dots in silicon.Inductive measurement of optically hyperpolarized phosphorous donor nuclei in an isotopically enriched silicon-28 crystal.Quantum coherence in a processable vanadyl complex: new tools for the search of molecular spin qubits.One-second coherence for a single electron spin coupled to a multi-qubit nuclear-spin environment.Toward high-fidelity coherent electron spin transport in a GaAs double quantum dot
P2860
Q30373980-215A681D-8297-482A-93D7-C3A6921FF723Q30388006-6200A909-3646-4BDD-9FA4-B6DCDD678480Q34427170-9F824EB0-CBFE-4FEB-B07F-7862644F2396Q35682005-55B0D602-E404-435E-B645-13C02BE7DC74Q36160076-689797BD-766B-462C-92EF-A5194FBC546CQ36268187-503C9A7D-54BA-43B0-AD7C-CA2E719CC612Q36305446-B17D00C6-7523-47C2-AFF4-DF57677B3E58Q36341360-12E79280-6B84-4A10-A522-93DCFF56AD3EQ37072940-70068C14-F4B1-44EE-8936-F98D5F330037Q37195807-D11811D7-489C-4F5F-8909-C294FA609C88Q37369530-72A8E7F7-DD41-4255-80B8-10B5C41F70BBQ37412016-778C686A-2B74-4C04-88F5-C560A4D961A9Q38371064-CEA9CFF6-E462-4695-B3D5-7F19BD13154BQ38939337-948D4D84-6D07-4DCB-9766-C142BD188120Q41037156-92B35D30-964D-4880-BCB1-8D9BB20EE8DFQ41635554-E115A2B7-42A5-4A39-A726-D30A963892C1Q42073823-0411FC1D-2684-4288-93DA-BEF5FDA9344EQ42645370-608B45B6-18A9-45FF-83C9-C181E940FFEDQ42657302-2CC5A178-016A-4540-974B-6F686E0D099CQ44718566-82C6168A-AA46-4BEE-920B-D210B13C1091Q47099128-D160FDB3-BAD6-43D1-9239-3DEF8CE149A1Q47141844-F7BD35B6-2566-4498-91EC-46D8564FAAF9Q47152816-D4F0C17E-684C-4934-927D-7CFFB81C30BBQ47236569-DA85DF72-A917-47D0-B9CC-3A80D7BF96DEQ47797913-03E8E4AD-D7D0-434E-87C8-58CC95742DB4Q48103832-51172293-FC14-41E0-8065-EBA3330543E1Q48262321-E5D7C191-A54C-43AD-888C-59ACEBF3251DQ48264965-EA75EA2B-A146-4DDC-9BE7-1DF767AC7EECQ50096429-38A5D1B2-006A-4646-9EA0-D07731DC0A7BQ51223604-BAD1248B-7A5C-499A-B503-849C008097C0Q51301214-85D93CB9-4EDB-4B3A-962B-DC19767491D0Q51352036-5E2D1F54-8A0D-4985-9563-A5AE52C915F7Q51459434-F5E8C8F8-D596-4E24-8A77-3E1D920B47B6Q51575777-42DABAF5-4DDA-4345-A6FF-57651322D0BCQ51582671-1409B99C-A328-432C-87A1-21FFDCE3909CQ52597800-F5F4E802-CD37-4883-8A1D-882BA175853AQ52870349-027CD213-A0DF-4B12-AD8A-B3B40759FAE2Q55362162-05B74A55-9B5A-463C-B875-C4E446300E7CQ55450200-53C95C68-49CB-4EA5-A8DD-22D30F1262C0Q57155921-B074CC2F-34BE-4945-B350-FAFE030C612F
P2860
Storing quantum information for 30 seconds in a nanoelectronic device.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年学术文章
@wuu
2014年学术文章
@zh-cn
2014年学术文章
@zh-hans
2014年学术文章
@zh-my
2014年学术文章
@zh-sg
2014年學術文章
@yue
2014年學術文章
@zh
2014年學術文章
@zh-hant
name
Storing quantum information for 30 seconds in a nanoelectronic device.
@en
Storing quantum information for 30 seconds in a nanoelectronic device.
@nl
type
label
Storing quantum information for 30 seconds in a nanoelectronic device.
@en
Storing quantum information for 30 seconds in a nanoelectronic device.
@nl
prefLabel
Storing quantum information for 30 seconds in a nanoelectronic device.
@en
Storing quantum information for 30 seconds in a nanoelectronic device.
@nl
P2093
P2860
P50
P356
P1476
Storing quantum information for 30 seconds in a nanoelectronic device.
@en
P2093
Andrea Morello
Arne Laucht
Kohei M Itoh
Rachpon Kalra
Takeharu Sekiguchi
P2860
P2888
P304
P356
10.1038/NNANO.2014.211
P407
P577
2014-10-12T00:00:00Z