about
Impact of transient currents caused by alternating drain stress in oxide semiconductors.Electron-blocking by the potential barrier originated from the asymmetrical local density of state in the oxide semiconductor.Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor
P50
description
researcher
@en
wetenschapper
@nl
name
Katsumi Abe
@en
Katsumi Abe
@nl
type
label
Katsumi Abe
@en
Katsumi Abe
@nl
prefLabel
Katsumi Abe
@en
Katsumi Abe
@nl
P31
P496
0000-0002-5665-6872