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Q33459688-3F59FD38-06CA-40BA-A119-FF38A07B8760
Q33459688-3F59FD38-06CA-40BA-A119-FF38A07B8760
BestRank
Statement
http://www.wikidata.org/entity/statement/Q33459688-3F59FD38-06CA-40BA-A119-FF38A07B8760
Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition.
P2860
Q33459688-3F59FD38-06CA-40BA-A119-FF38A07B8760
BestRank
Statement
http://www.wikidata.org/entity/statement/Q33459688-3F59FD38-06CA-40BA-A119-FF38A07B8760
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2fc037562cf5bcb3bd370658c58c48dde2fc0860
P2860
Lateral graphene-hBCN heterostructures as a platform for fully two-dimensional transistors.