Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition.
about
Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructuresAtomistic understanding of the lateral growth of graphene from the edge of an h-BN domain: towards a sharp in-plane junction.Catalytic CVD synthesis of boron nitride and carbon nanomaterials - synergies between experiment and theory.Stability, and optical and electronic properties of ultrathin h-BNC.Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni AlloyOpening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal.In Situ Observations during Chemical Vapor Deposition of Hexagonal Boron Nitride on Polycrystalline Copper.Growth of Graphene/h-BN Heterostructures on Recyclable Pt Foils by One-Batch Chemical Vapor Deposition.Impact of Mismatch Angle on Electronic Transport Across Grain Boundaries and Interfaces in 2D Materials.Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy.Facile synthesis of exfoliated Co-Al LDH-carbon nanotube composites with high performance as supercapacitor electrodes.Programmable Extreme Pseudomagnetic Fields in Graphene by a Uniaxial Stretch.Spatially resolved one-dimensional boundary states in graphene-hexagonal boron nitride planar heterostructures.Electronic transport in heterostructures of chemical vapor deposited graphene and hexagonal boron nitride.
P2860
Q35488394-DC4C6DE0-E445-41AC-9EB5-C49A34ACA64EQ36293357-C38D913A-58C9-4816-8695-86FFAA54D96FQ38636281-3F472516-6607-45E7-815C-2E3890B5D30BQ38760575-16CBB5A3-B5E1-4E57-8CF7-2BC3B147D0E5Q41711014-12405D2C-E8F0-4562-B451-8764AF25C902Q42626425-D17A83C5-A5E7-42A1-9FED-85F949673DE7Q43124687-7A55A878-8B8D-47A7-A10F-94F2D5BF0EA3Q47114232-CECD9215-6C63-4BA2-AA0D-B7CFDD0A8170Q47134874-B379B87A-CC74-4F7E-BF71-32E704608A43Q51016102-6759142D-8D85-4076-92A2-3962B5EF7576Q51066886-DF14906D-DC1D-44DC-81AF-610FDBB867BAQ51591448-8A8950B3-D623-46F9-BA4F-3D2F8E25C7E1Q53251898-25BDF74B-EC5D-4530-BE21-FC25755B4E04Q53252486-E4D3470B-5B7B-461A-9D88-852C56E1AA96
P2860
Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition.
description
2013 nî lūn-bûn
@nan
2013 թուականի Նոյեմբերին հրատարակուած գիտական յօդուած
@hyw
2013 թվականի նոյեմբերին հրատարակված գիտական հոդված
@hy
2013年の論文
@ja
2013年論文
@yue
2013年論文
@zh-hant
2013年論文
@zh-hk
2013年論文
@zh-mo
2013年論文
@zh-tw
2013年论文
@wuu
name
Continuous growth of hexagonal ...... ure chemical vapor deposition.
@ast
Continuous growth of hexagonal ...... ure chemical vapor deposition.
@en
type
label
Continuous growth of hexagonal ...... ure chemical vapor deposition.
@ast
Continuous growth of hexagonal ...... ure chemical vapor deposition.
@en
prefLabel
Continuous growth of hexagonal ...... ure chemical vapor deposition.
@ast
Continuous growth of hexagonal ...... ure chemical vapor deposition.
@en
P2093
P2860
P356
P1433
P1476
Continuous growth of hexagonal ...... ure chemical vapor deposition.
@en
P2093
A T Charlie Johnson
Andrew M Rappe
Chan-Woo Lee
Eric N Dattoli
Gang Hee Han
Julio A Rodríguez-Manzo
Marija Drndic
Mitchell B Lerner
Nicholas J Kybert
Zhengqing John Qi
P2860
P304
10129-10138
P356
10.1021/NN404331F
P407
P577
2013-11-13T00:00:00Z