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Q38988062-44BFFA10-213D-42CE-8EF0-4AD669A596F2
Q38988062-44BFFA10-213D-42CE-8EF0-4AD669A596F2
BestRank
Statement
http://www.wikidata.org/entity/statement/Q38988062-44BFFA10-213D-42CE-8EF0-4AD669A596F2
The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility.
P2860
Q38988062-44BFFA10-213D-42CE-8EF0-4AD669A596F2
BestRank
Statement
http://www.wikidata.org/entity/statement/Q38988062-44BFFA10-213D-42CE-8EF0-4AD669A596F2
rank
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type
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Statement
wasDerivedFrom
e1b245082b3ac6b15e58b83906362dcaa2e1ac40
P2860
Degenerate n-doping of few-layer transition metal dichalcogenides by potassium.