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Q47309060-2FDE64B1-C2F6-4187-A8C1-B905E68C6FBC
Q47309060-2FDE64B1-C2F6-4187-A8C1-B905E68C6FBC
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http://www.wikidata.org/entity/statement/Q47309060-2FDE64B1-C2F6-4187-A8C1-B905E68C6FBC
Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.
P2860
Q47309060-2FDE64B1-C2F6-4187-A8C1-B905E68C6FBC
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http://www.wikidata.org/entity/statement/Q47309060-2FDE64B1-C2F6-4187-A8C1-B905E68C6FBC
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3fdae67b7be80fe5bef6648f8e39c20e86023b32
P2860
Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects.