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Q47920772-CF28004D-ADCB-4498-839A-CE6944401235
Q47920772-CF28004D-ADCB-4498-839A-CE6944401235
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http://www.wikidata.org/entity/statement/Q47920772-CF28004D-ADCB-4498-839A-CE6944401235
Native point defects on hydrogen-passivated 4H-SiC (0001) surface and the effects on metal adsorptions.
P2860
Q47920772-CF28004D-ADCB-4498-839A-CE6944401235
BestRank
Statement
http://www.wikidata.org/entity/statement/Q47920772-CF28004D-ADCB-4498-839A-CE6944401235
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77150f25212f88985eedfc7a32878dafb48e52b4
P2860
Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide