Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.
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Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.
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2017 nî lūn-bûn
@nan
2017 թուականի Մարտին հրատարակուած գիտական յօդուած
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2017 թվականի մարտին հրատարակված գիտական հոդված
@hy
2017年の論文
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2017年論文
@yue
2017年論文
@zh-hant
2017年論文
@zh-hk
2017年論文
@zh-mo
2017年論文
@zh-tw
2017年论文
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name
Resistive switching mechanism ...... cture revealed by in-situ TEM.
@ast
Resistive switching mechanism ...... cture revealed by in-situ TEM.
@en
type
label
Resistive switching mechanism ...... cture revealed by in-situ TEM.
@ast
Resistive switching mechanism ...... cture revealed by in-situ TEM.
@en
prefLabel
Resistive switching mechanism ...... cture revealed by in-situ TEM.
@ast
Resistive switching mechanism ...... cture revealed by in-situ TEM.
@en
P2093
P2860
P356
P1433
P1476
Resistive switching mechanism ...... cture revealed by in-situ TEM.
@en
P2093
P2860
P2888
P356
10.1038/SREP45143
P407
P577
2017-03-21T00:00:00Z
P6179
1084132990