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Q30842442-42F5FE13-EC2B-4DAC-9C38-31E795DEED81
Q30842442-42F5FE13-EC2B-4DAC-9C38-31E795DEED81
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http://www.wikidata.org/entity/statement/Q30842442-42F5FE13-EC2B-4DAC-9C38-31E795DEED81
Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.
P2860
Q30842442-42F5FE13-EC2B-4DAC-9C38-31E795DEED81
BestRank
Statement
http://www.wikidata.org/entity/statement/Q30842442-42F5FE13-EC2B-4DAC-9C38-31E795DEED81
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c2a444ec4789f6cf08cef6b2408c7e78503edb0b
P2860
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures