High performance of graphene oxide-doped silicon oxide-based resistance random access memory.
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Surface scattering mechanisms of tantalum nitride thin film resistorPhysical and chemical mechanisms in oxide-based resistance random access memory.Conductance Quantization in Resistive Random Access Memory.Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer.Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.
P2860
High performance of graphene oxide-doped silicon oxide-based resistance random access memory.
description
2013 nî lūn-bûn
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2013年の論文
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2013年学术文章
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2013年学术文章
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2013年学术文章
@zh-hans
2013年学术文章
@zh-my
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@zh-sg
2013年學術文章
@yue
2013年學術文章
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2013年學術文章
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name
High performance of graphene o ...... sistance random access memory.
@en
High performance of graphene o ...... sistance random access memory.
@nl
type
label
High performance of graphene o ...... sistance random access memory.
@en
High performance of graphene o ...... sistance random access memory.
@nl
prefLabel
High performance of graphene o ...... sistance random access memory.
@en
High performance of graphene o ...... sistance random access memory.
@nl
P2093
P2860
P356
P1476
High performance of graphene o ...... sistance random access memory.
@en
P2093
Chih-Cheng Shih
Chih-Hung Pan
Jen-Chung Lou
Jung-Hui Chen
Kai-Huang Chen
Kuan-Chang Chang
Simon M Sze
Syuan-Yong Huang
Tai-Fa Young
P2860
P2888
P356
10.1186/1556-276X-8-497
P577
2013-11-21T00:00:00Z
P6179
1052064394