Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors.
about
Solution processing of transparent conductors: from flask to film.High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices.Solution-processed flexible fluorine-doped indium zinc oxide thin-film transistors fabricated on plastic film at low temperature.Controlled Defects of Fluorine-incorporated ZnO Nanorods for Photovoltaic EnhancementElectric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film TransistorsEngineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration.High performance of graphene oxide-doped silicon oxide-based resistance random access memory.Solution-processable metal oxide semiconductors for thin-film transistor applications.Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications.Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer.Effect of Si on the Energy Band Gap Modulation and Performance of Silicon Indium Zinc Oxide Thin-Film Transistors.Comparison of bipolar hosts and mixed-hosts as host structures for deep-blue phosphorescent organic light emitting diodes.Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites.Chemically Functionalized, Well-Dispersed Carbon Nanotubes in Lithium-Doped Zinc Oxide for Low-Cost, High-Performance Thin-Film Transistors.Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors.Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture.Post-Humid Annealing of Low-Temperature Solution-Processed Indium Based Metal Oxide TFTsPostannealing Process for Low Temperature Processed Sol–Gel Zinc Tin Oxide Thin Film Transistors
P2860
Q33450890-6C6E3FF5-11A6-4EA2-99EF-39F4B47AFE82Q36142289-2125E41B-405E-4583-9D1F-7C2389259049Q36959296-8F2ACBEF-AC28-4A76-9ADD-1BE0F788BC34Q37227790-CD6B4271-7220-4FC0-A3BB-F8634130FDF0Q37325435-85DD001E-AEB1-41F6-8801-E2CBA5B9320BQ37393866-5C9834AB-F841-440A-8068-F49D4D5FE3BAQ37418064-436959F3-8CAB-4929-A869-FAE3424B2849Q38114756-4672BADB-45D2-4396-9717-8F13FF591342Q41708810-BEFA7227-1B2C-4B9A-A023-92CFA18B936AQ42174788-BA56D9CB-135A-450A-8742-A506870EE6A1Q46727538-828156D9-A536-4841-B637-270BE05968D9Q50272835-F152E725-AEFE-4025-8352-43D75EDE9AC4Q50781932-4512E0E9-281C-4911-8363-BACC3AB6F1ABQ51531762-DD9DF399-3F26-44AE-ACA2-565CF8FD1EB3Q53767037-45551D0E-4943-4E79-BE10-9391B5DFAD58Q55023916-43982A57-8974-4F2E-B56F-D1C9FC0C0122Q55381700-F76EE9D0-5092-4B51-B7A4-77709E8B2022Q57617047-B10B4496-1F3D-4A69-A0C4-767BA0ACED57Q57617061-C2F9DFBD-3253-4186-A5DB-31696302BB17
P2860
Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors.
description
2010 nî lūn-bûn
@nan
2010年の論文
@ja
2010年論文
@yue
2010年論文
@zh-hant
2010年論文
@zh-hk
2010年論文
@zh-mo
2010年論文
@zh-tw
2010年论文
@wuu
2010年论文
@zh
2010年论文
@zh-cn
name
Role of gallium doping in dram ...... c oxide thin-film transistors.
@en
type
label
Role of gallium doping in dram ...... c oxide thin-film transistors.
@en
prefLabel
Role of gallium doping in dram ...... c oxide thin-film transistors.
@en
P2093
P2860
P356
P1433
P1476
Role of gallium doping in dram ...... c oxide thin-film transistors.
@en
P2093
Jooho Moon
Sunho Jeong
Young-Geun Ha
P2860
P304
P356
10.1002/ADMA.200902450
P407
P577
2010-03-01T00:00:00Z