Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer.

about

Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer.

Item

http://www.wikidata.org/entity/Q42174788

description

2016 nî lūn-bûn

@nan

2016年の論文

@ja

2016年論文

@yue

2016年論文

@zh-hant

2016年論文

@zh-hk

2016年論文

@zh-mo

2016年論文

@zh-tw

2016年论文

@wuu

2016年论文

@zh

2016年论文

@zh-cn

name

Highly Bendable In-Ga-ZnO Thin ...... able Organic Dielectric Layer.

@en

Highly Bendable In-Ga-ZnO Thin ...... able Organic Dielectric Layer.

@nl

type

Item

label

Highly Bendable In-Ga-ZnO Thin ...... able Organic Dielectric Layer.

@en

Highly Bendable In-Ga-ZnO Thin ...... able Organic Dielectric Layer.

@nl

prefLabel

Highly Bendable In-Ga-ZnO Thin ...... able Organic Dielectric Layer.

@en

Highly Bendable In-Ga-ZnO Thin ...... able Organic Dielectric Layer.

@nl

P1476

Highly Bendable In-Ga-ZnO Thin ...... able Organic Dielectric Layer.

@en

P2093

Byoung Hun Lee

http://www.w3.org/2001/XMLSchema#string

Gun Young Jung

http://www.w3.org/2001/XMLSchema#string

Heon Lee

http://www.w3.org/2001/XMLSchema#string

Hyoc-Min Youn

http://www.w3.org/2001/XMLSchema#string

Min-Ji Park

http://www.w3.org/2001/XMLSchema#string

Namsoo Lim

http://www.w3.org/2001/XMLSchema#string

Sung-Min Yoon

http://www.w3.org/2001/XMLSchema#string

Yogeenth Kumaresan

http://www.w3.org/2001/XMLSchema#string

Yonghun Kim

http://www.w3.org/2001/XMLSchema#string

Yusin Pak

http://www.w3.org/2001/XMLSchema#string

P2860

Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.

High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices.

Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors.

Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate.

Fully solution-processed flexible organic thin film transistor arrays with high mobility and exceptional uniformity.

Flexible organic transistors and circuits with extreme bending stability.

Simple method to enhance positive bias stress stability of In-Ga-Zn-O thin-film transistors using a vertically graded oxygen-vacancy active layer.

Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors.

Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

P2888

srep37764

P304

37764

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1038/SREP37764

http://www.w3.org/2001/XMLSchema#string

P407

English

P478

http://www.w3.org/2001/XMLSchema#string

P577

2016-11-23T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

27876893

http://www.w3.org/2001/XMLSchema#string

P921

thin film

P932

5120347

http://www.w3.org/2001/XMLSchema#string