Observation of conductance quantization in oxide-based resistive switching memory. - sprookjes - yvandenbroek - TriplyDB

Observation of conductance quantization in oxide-based resistive switching memory.

Observation of conductance quantization in oxide-based resistive switching memory.

http://www.wikidata.org/entity/Q45075183

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Key concepts behind forming-free resistive switching incorporated with rectifying transport properties.Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory.Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5-Ta system.Conductance Quantization in Resistive Random Access Memory.Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors.Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method Silk Fibroin for Flexible Electronic Devices.Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices.Sericin for resistance switching device with multilevel nonvolatile memory.Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM.Quantum conductance in silicon oxide resistive memory devices.Electric-field control of ferromagnetism through oxygen ion gating.On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics.Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device.Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(ii) bis-terpyridine complex.Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory.Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor.Unconventional resistive switching behavior in ferroelectric tunnel junctions.Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s.The non-linear electrical properties of human skin make it a generic memristor Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory

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P2860

Observation of conductance quantization in oxide-based resistive switching memory.

http://www.wikidata.org/entity/Q45075183

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2012 nî lūn-bûn

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2012年の論文

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2012年学术文章

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2012年学术文章

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2012年学术文章

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2012年学术文章

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2012年学术文章

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2012年学术文章

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2012年學術文章

@yue

2012年學術文章

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name

Observation of conductance quantization in oxide-based resistive switching memory.

@en

Observation of conductance quantization in oxide-based resistive switching memory.

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type

label

Observation of conductance quantization in oxide-based resistive switching memory.

@en

Observation of conductance quantization in oxide-based resistive switching memory.

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prefLabel

Observation of conductance quantization in oxide-based resistive switching memory.

@en

Observation of conductance quantization in oxide-based resistive switching memory.

@nl

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Advanced Materials

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Observation of conductance quantization in oxide-based resistive switching memory.

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P2093

Benlin Hu

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Jiandi Zhang

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Liang Pan

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Run-Wei Li

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Wenjing Su

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Xiaojian Zhu

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Yiwei Liu

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P2860

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Real-time in situ HRTEM-resolved resistance switching of Ag2S nanoscale ionic conductor.

In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory.

Forming and switching mechanisms of a cation-migration-based oxide resistive memory.

Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode.

Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

Quantized conductance through individual rows of suspended gold atoms

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3941-3946

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scholarly article

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10.1002/ADMA.201201506

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2012-06-18T00:00:00Z

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22707001

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