about
Ge/Si nanowire heterostructures as high-performance field-effect transistorsData Clustering using Memristor NetworksOne-dimensional hole gas in germanium/silicon nanowire heterostructures.Mechanical properties of vapor-liquid-solid synthesized silicon nanowires.A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications.Iodine Vacancy Redistribution in Organic-Inorganic Halide Perovskite Films and Resistive Switching Effects.Nanoelectronics from the bottom up.Nanoscale resistive switching devices: mechanisms and modeling.Sparse coding with memristor networks.Experimental Demonstration of Feature Extraction and Dimensionality Reduction Using Memristor Networks.Single-Readout High-Density Memristor Crossbar.Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor.An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions.Random telegraph noise and resistance switching analysis of oxide based resistive memory.Vertical nanowire heterojunction devices based on a clean Si/Ge interface.Oxide heterostructure resistive memory.A resistance-switchable and ferroelectric metal-organic framework.Experimental demonstration of a second-order memristor and its ability to biorealistically implement synaptic plasticity.Stochastic memristive devices for computing and neuromorphic applications.Controlled 3D buckling of silicon nanowires for stretchable electronics.Observation of conductance quantization in oxide-based resistive switching memory.Memristors: Going active.Nanostructured thin films made by dewetting method of layer-by-layer assembly.Reservoir computing using dynamic memristors for temporal information processing.The future of electronics based on memristive systemsOn-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics.Doping-dependent electrical characteristics of SnO2 nanowires.Si/a-Si core/shell nanowires as nonvolatile crossbar switches.CMOS compatible nanoscale nonvolatile resistance switching memory.Optogenetics-Inspired Tunable Synaptic Functions in Memristors.Electronic and optical properties of oxygen vacancies in amorphous Ta2O5 from first principles.Conduction mechanism of a TaO(x)-based selector and its application in crossbar memory arrays.Electrochemical dynamics of nanoscale metallic inclusions in dielectrics.Oxide resistive memory with functionalized graphene as built-in selector element.Comprehensive physical model of dynamic resistive switching in an oxide memristor.Observation of conducting filament growth in nanoscale resistive memories.Fully transparent thin-film transistor devices based on SnO2 nanowires.Short-term memory to long-term memory transition in a nanoscale memristor.Device and SPICE modeling of RRAM devices.Emulation of synaptic metaplasticity in memristors.
P50
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P50
description
researcher
@en
հետազոտող
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name
Wei Lu
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Wei Lu
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Wei Lu
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Wei Lu
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Wei Lu
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label
Wei Lu
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Wei Lu
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Wei Lu
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Wei Lu
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Wei Lu
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Wei Lu
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Wei Lu
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Wei Lu
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Wei Lu
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Wei Lu
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Wei Lu
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P214
P244
P1053
E-8388-2011
P106
P1960
pPInY4UAAAAJ
P214
P244
no2015023730
P2456
P31
P3829
P496
0000-0003-4731-1976
P7859
lccn-no2015023730