Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites.

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A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory.

P2860

Q50605119-C403C920-207B-4DE1-BEBC-AAF57B74922C

P2860

Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites.

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http://www.wikidata.org/entity/Q50781932

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2014 nî lūn-bûn

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2014年の論文

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2014年学术文章

@wuu

2014年学术文章

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2014年学术文章

@zh-cn

2014年学术文章

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2014年学术文章

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2014年学术文章

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2014年學術文章

@yue

2014年學術文章

@zh-hant

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Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites.

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Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites.

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Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites.

@en

Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites.

@nl

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Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites.

@en

Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites.

@nl

P1476

Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites.

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P2093

Charles K Song

http://www.w3.org/2001/XMLSchema#string

Kang-Jun Baeg

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Myung-Gil Kim

http://www.w3.org/2001/XMLSchema#string

Xinge Yu

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Hybrid gate dielectric materials for unconventional electronic circuitry.

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Present status of amorphous In-Ga-Zn-O thin-film transistors.

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Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.

Oxygen "getter" effects on microstructure and carrier transport in low temperature combustion-processed a-InXZnO (X = Ga, Sc, Y, La) transistors.

High performance solution-processed indium oxide thin-film transistors.

Nonvolatile polymer memory with nanoconfinement of ferroelectric crystals.

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process.

P304

7170-7177

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scholarly article

P356

10.1002/ADMA.201401354

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P407

English

P433

http://www.w3.org/2001/XMLSchema#string

P478

http://www.w3.org/2001/XMLSchema#string

P50

Antonio Facchetti

Tobin J. Marks

P577

2014-09-10T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P5875

265514506

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P698

25205206

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Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites.

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P2860

P2860

Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites.

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P50

P577

P5875

P698

P356

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P50

P577

P5875

P698