High-performance transparent inorganic-organic hybrid thin-film n-type transistors.
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Reinforced self-assembled nanodielectrics for high-performance transparent thin film transistors.Transparent lithium-ion batteriesNanoantenna-assisted plasmonic enhancement of IR absorption of vibrational modes of organic moleculesSurface passivation of semiconducting oxides by self-assembled nanoparticles.Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor.Paper electronics.Structural and electronic characterization of self-assembled molecular nanoarchitectures by X-ray photoelectron spectroscopy.Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors.Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics.Lead-free Single-molecule Switching Material with Electric, Optical, Thermal Triple Controllable Multifunction Based on Perovskite-like Crystal and Flexible Thin FilmTransparent high-performance thin film transistors from solution-processed SnO2 /ZrO2 gel-like precursors.Toward Environmentally Robust Organic Electronics: Approaches and Applications.Tunable optical properties of hybrid inorganic-organic [(TiO2)m(Ti-O-C6H4-O-)k]n superlattice thin films.In Situ Growth and Characterization of Metal Oxide Nanoparticles within Polyelectrolyte Membranes.Optical and surface properties of optically transparent Li3 PO4 solid electrolyte layer for transparent solid batteries.Strong temperature-dependent crystallization, phase transition, optical and electrical characteristics of p-type CuAlO2 thin films.Nanostructured Graphene: An Active Component in Optoelectronic Devices.High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channelSolution-Processed, High Performance Aluminum Indium Oxide Thin-Film Transistors Fabricated at Low TemperatureComplementary Metal Oxide Semiconductor Technology With and On PaperHigh-performance, fully transparent, and flexible zinc-doped indium oxide nanowire transistorsEffects of Unusual Gate Current on the Electrical Properties of Oxide Thin-Film TransistorsOrganic crystals at largeOverview of electroceramic materials for oxide semiconductor thin film transistors
P2860
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P2860
High-performance transparent inorganic-organic hybrid thin-film n-type transistors.
description
2006 nî lūn-bûn
@nan
2006年の論文
@ja
2006年学术文章
@wuu
2006年学术文章
@zh
2006年学术文章
@zh-cn
2006年学术文章
@zh-hans
2006年学术文章
@zh-my
2006年学术文章
@zh-sg
2006年學術文章
@yue
2006年學術文章
@zh-hant
name
High-performance transparent inorganic-organic hybrid thin-film n-type transistors.
@en
High-performance transparent inorganic-organic hybrid thin-film n-type transistors.
@nl
type
label
High-performance transparent inorganic-organic hybrid thin-film n-type transistors.
@en
High-performance transparent inorganic-organic hybrid thin-film n-type transistors.
@nl
prefLabel
High-performance transparent inorganic-organic hybrid thin-film n-type transistors.
@en
High-performance transparent inorganic-organic hybrid thin-film n-type transistors.
@nl
P2093
P356
P1433
P1476
High-performance transparent inorganic-organic hybrid thin-film n-type transistors.
@en
P2093
P2888
P304
P356
10.1038/NMAT1755
P407
P577
2006-10-15T00:00:00Z