The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors
about
The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors
description
article
@en
wetenschappelijk artikel
@nl
наукова стаття, опублікована у 2017
@uk
name
The impact of post-deposition ...... ZnO heterojunction transistors
@en
The impact of post-deposition ...... ZnO heterojunction transistors
@nl
type
label
The impact of post-deposition ...... ZnO heterojunction transistors
@en
The impact of post-deposition ...... ZnO heterojunction transistors
@nl
prefLabel
The impact of post-deposition ...... ZnO heterojunction transistors
@en
The impact of post-deposition ...... ZnO heterojunction transistors
@nl
P2093
P2860
P356
P1476
The impact of post-deposition ...... ZnO heterojunction transistors
@en
P2093
David J. Payne
Ivan Isakov
Thomas D. Anthopoulos
P2860
P356
10.1039/C6TC04907A
P577
2017-01-01T00:00:00Z