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Q57552324-2BDCB1A6-C1A9-4013-80C5-53E9E6CC5BA5
Q57552324-2BDCB1A6-C1A9-4013-80C5-53E9E6CC5BA5
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http://www.wikidata.org/entity/statement/Q57552324-2BDCB1A6-C1A9-4013-80C5-53E9E6CC5BA5
The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors
P2860
Q57552324-2BDCB1A6-C1A9-4013-80C5-53E9E6CC5BA5
BestRank
Statement
http://www.wikidata.org/entity/statement/Q57552324-2BDCB1A6-C1A9-4013-80C5-53E9E6CC5BA5
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cd6021d352870f21b2b37792aa41891e41b454ce
P2860
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3