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Effect of the blistering of ALD Al 2 O 3 films on the silicon surface in Al-Al 2 O 3 -Si structuresInvestigation of the resistive switching behavior in Ni/HfO 2 -based RRAM devicesQuantized bands model for the determination of the dielectric constant of high-κ layers2MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon2MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al2O3 dielectrics of different thickness2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectricsBlistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structuresCharge trapping analysis of Al2O3 films deposited by atomic layer deposition using H2O or O3 as oxidantCharge trapping and electrical degradation in atomic layer deposited Al2O3 filmsDefect assessment and leakage control in atomic layer deposited Al 2 O 3 and HfO 2 dielectricsElectrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealingImpact of electrical stress on the electrical characteristics of 2MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectricsThin dielectric films grown by atomic layer deposition: Properties and applicationsComparison between Al 2 O 3 thin films grown by ALD using H 2 O or O 3 as oxidant sourceDeposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on SiliconElectrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substratesElectron Irradiation Effects on Atomic Layer Deposited High-k Gate DielectricsEffect of Processing Conditions on the Electrical Characteristics of Atomic Layer Deposited Al
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description
forsker
@nb
researcher ORCID ID = 0000-0003-1081-8829
@en
wetenschapper
@nl
name
O. Beldarrain
@ast
O. Beldarrain
@nl
Oihane Beldarrain
@en
Oihane Beldarrain
@nb
type
label
O. Beldarrain
@ast
O. Beldarrain
@nl
Oihane Beldarrain
@en
Oihane Beldarrain
@nb
altLabel
O. Beldarrain
@en
prefLabel
O. Beldarrain
@ast
O. Beldarrain
@nl
Oihane Beldarrain
@en
Oihane Beldarrain
@nb
P108
P31
P496
0000-0003-1081-8829