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Q38485795-1C9E6932-1200-42E1-9F52-C42B8F08F86F
Q38485795-1C9E6932-1200-42E1-9F52-C42B8F08F86F
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http://www.wikidata.org/entity/statement/Q38485795-1C9E6932-1200-42E1-9F52-C42B8F08F86F
Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors.
P2860
Q38485795-1C9E6932-1200-42E1-9F52-C42B8F08F86F
BestRank
Statement
http://www.wikidata.org/entity/statement/Q38485795-1C9E6932-1200-42E1-9F52-C42B8F08F86F
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9164d648c8722f49d6e63e1861e876e219004b83
P2860
X‐ray photoemission spectroscopy studies of Sn‐doped indium‐oxide films